# Browse by Subject "Physics, Condensed Matter"

• (1961)

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• (1998)
Two-photon fluorescence microscopy has proven to be an useful technique for imaging biological systems. Good spatial resolution, reduced photobleaching, and efficient rejection of excitation wavelength from emitted ...

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• (1976)

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• (2006)
We also present the first controlled atomic scale study of the interactions between isolated Mn impurities mediated by electronic states in GaAs. High-resolution STM measurements provide visualization of the GaAs electronic ...

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• (2002)
We have developed a detailed model for hot-carrier induced interface state generation in silicon metal-oxide semiconductor field-effect transistors (MOSFETs). In the process, we discuss a different interpretation of the ...

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• (1996)
We present, for the first time, an account of single adatom behavior on the close-packed surface of a hexagonally close-packed material. Specifically, we have explored the diffusion and related phenomena of Re and W adatoms ...

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• (1996)
The properties of radiation-induced defects were investigated by examining the radiation-enhanced diffusion and radiation-induced order-disorder kinetics in the ordered intermetallic alloy Cu$\sb3$Au.

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• (2008)
We have developed a method for depositing atomically clean, nanometer-sized graphene monolayers with 2-30 nm lateral dimensions and we probe the local electronic properties of the graphene using the ultrahigh-vacuum scanning ...

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• (1989)
This thesis deals with the theory of the primary nucleation and subsequent expansion of the superfluid $\sp3$He-B phase in the metastable, hypercooled A phase. An overview of the theory of dynamical phenomena in Fermi ...

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• (1996)
The growth rates of Si(001) and Ge(001) by gas-source molecular-beam epitaxy (GS-MBE) from $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6$ as a function of T$\sb{\rm s}$ are well described by a model based upon dissociative $\rm ... application/pdf PDF (6MB) • (2004) Finally, returning to pinning field statistics, a comparison of the length-scales involved in avalanche size distributions, temporal Barkhausen power spectra, and spatial pinning field power spectra illustrates that the ... application/pdf PDF (4MB) • (1995) The properties of a silicon adatom on Si(001) surface and around three single-layer steps, namely type A (S$\rm\sb A$), bonded type B (S$\rm\sb B$) and nonbonded type B (S$\rm\sb{B\sp\prime}$), on Si(001) have been studied, ... application/pdf PDF (5MB) • (1990) Free excitons provide the only experimental system other than helium in which the behavior of particles with mass is known to follow Bose-Einstein statistics. I present experimental observations of the kinetic energy ... application/pdf PDF (8MB) • (1994) Excitons in Cu$\sb2$O have been demonstrated to be a nearly ideal gas of bosons, providing a unique system for studying Bose-Einstein statistics and Bose-Einstein Condensation of an ideal gas in the laboratory. In this ... application/pdf PDF (7MB) • (1994) In this thesis the method of bosonization of fermionic many-body systems in any number of dimensions is developed. After an introduction to the problem in chapter 1 and to the method of bosonization in chapter 2 (with its ... application/pdf PDF (5MB) • (1995) In this thesis we derive a set of bosonization rules for the problem of a fermionic interacting system living on the half line coupled to a quantum degree of freedom at a boundary. This is an appropriate model to describe ... application/pdf PDF (4MB) • (1992) Brillouin light scattering studies have been made on the temperature dependence and dispersion of long-wavelength acoustic phonons in single-crystal Dy films and long-wavelength acoustic magnons in single-crystal Gd films. ... application/pdf PDF (6MB) • (1997) Photoluminescence characterization has discovered a novel broad bands excitation effect in rare earth-doped chalcogenide glasses. Photoluminescence excitation (PLE) bands with a width of$\sim\$450 nm have been observed ...

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• (1968)

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• (1993)
The development of carbon doping for producing stable p-type doping profiles in MOCVD-grown GaAs has made MOCVD the preferred technique for production of highly reliable GaAs-based HBT structures. In the InP/InGaAs materials ...

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