# Browse by Subject "Physics, Condensed Matter"

• (1968)

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• (1993)
The development of carbon doping for producing stable p-type doping profiles in MOCVD-grown GaAs has made MOCVD the preferred technique for production of highly reliable GaAs-based HBT structures. In the InP/InGaAs materials ...

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• (1990)
A dilute mixture of CCl$\sb4$ in high purity H$\sb2$ has been used as a carbon dopant source for $\rm Al\sb{x}Ga\sb{1-x}As$ grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism ...

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• (2001)
Epitaxial metastable Ge1-yCy alloy layers with y ≤ 0.035 were grown on Ge(001) from hyperthermal Ge and C atomic beams at deposition temperatures 250 ≤ Ts ≤ 550°C. I show that the use of hyperthermal beams ...

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• (2001)
The key results of this research can be summarized as follows: (1) In Si1-yCy/Si(001), alloys, I find that all C incorporates in substitutional sites at Ts < 580°C with y ≤ 0.026. At Ts ≥ 580°C, increasing y ...

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• (1984)
The ('13)C Nuclear Magnetic Resonance lines, spin-lattice relaxation times T(,1) and spin-spin relaxation times T(,2) of CO chemisorbed on the surface layer of small particles of Pt metal have been observed by the method ...

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• (1993)
Density matrix formulation is used to investigate the nonlinear optical properties of semiconductor quantum-well devices. The generation of terahertz electromagnetic pulses from ultrafast optical pulse excitations of ...

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• (1989)
The diffusion of zinc in GaAs is highly anomalous in that the diffusion coefficient (D) is proportional to the zinc concentration squared in marked contrast to Fick's law which predicts that D is concentration independent. ...

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• (2009)
The character of electronic states near the Mott-Anderson metal-insulator transition in the ferromagnetic semiconductor Ga1-xMn xAs is studied by cross sectional scanning tunneling microscopy. 200nm thick samples grown by ...

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• (1991)
The routing capabilities of waveguides defined by Zn, SiO$\sb2$, and In/SiO$\sb2$ Impurity-Induced Layer Disordering (IILD) of a single GaAs quantum-well graded barrier laser structure are investigated using raised-cosine ...

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• (1987)
A detailed experimental study of the remarkable collective-transport properties of charge-density-wave (CDW) conductors is presented. Measurements of current oscillations observed in response to applied dc voltages and of ...

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• (1990)
A new and unique high vacuum crystal growth system has been developed. The gas source molecular beam/chemical beam epitaxial growth system features a 7000 l/s diffusion pumping system mounted directly beneath a molecular ...

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• (1992)
This thesis is primarily concerned with a quantitative investigation of the chemical diffusion of oxygen in YBa$\sb2$Cu$\sb3$O$\sb{\rm 6+x}$. The research also investigates the optimization of crystal growth and the ...

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• (2004)
A zero-order semi-empirical model is established allowing the attachment of physical understanding and CEPVD experimental phenomena. The model stems from the knowledge of reactive sputtering and PECVD processes as well as ...

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• (1965)

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• (2000)
The theoretical foundations of CXD are described in Chapter 1 as derived from the kinematical formulation for x-ray diffraction and from the temporal and spatial coherence of radiation. The antiphase domain structure of ...

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• (1960)

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• (1969)

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• (1993)
A comparison between (InAs)$\sb1$/(GaAs)$\sb1$ short-period-superlattice (SPS) and $\rm In\sb{0.5}Ga\sb{0.5}As$ alloy quantum-well structures grown on GaAs substrates has been made. Structural properties, photoluminescence ...

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• (2003)
I report ab initio simulations of nitrogen as a function of temperature and pressure that reveal new structures and basic features of the phase diagram. In particular, the simulations show there are many structures with ...

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