Browse by Subject "Physics, Condensed Matter"

• (1993)
The development of carbon doping for producing stable p-type doping profiles in MOCVD-grown GaAs has made MOCVD the preferred technique for production of highly reliable GaAs-based HBT structures. In the InP/InGaAs materials ...

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• (1990)
A dilute mixture of CCl$\sb4$ in high purity H$\sb2$ has been used as a carbon dopant source for $\rm Al\sb{x}Ga\sb{1-x}As$ grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism ...

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• (1993)
Density matrix formulation is used to investigate the nonlinear optical properties of semiconductor quantum-well devices. The generation of terahertz electromagnetic pulses from ultrafast optical pulse excitations of ...

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• (1989)
The diffusion of zinc in GaAs is highly anomalous in that the diffusion coefficient (D) is proportional to the zinc concentration squared in marked contrast to Fick's law which predicts that D is concentration independent. ...

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• (1991)
The routing capabilities of waveguides defined by Zn, SiO$\sb2$, and In/SiO$\sb2$ Impurity-Induced Layer Disordering (IILD) of a single GaAs quantum-well graded barrier laser structure are investigated using raised-cosine ...

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• (1987)
A detailed experimental study of the remarkable collective-transport properties of charge-density-wave (CDW) conductors is presented. Measurements of current oscillations observed in response to applied dc voltages and of ...

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• (1990)
A new and unique high vacuum crystal growth system has been developed. The gas source molecular beam/chemical beam epitaxial growth system features a 7000 l/s diffusion pumping system mounted directly beneath a molecular ...

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• (1992)
This thesis is primarily concerned with a quantitative investigation of the chemical diffusion of oxygen in YBa$\sb2$Cu$\sb3$O$\sb{\rm 6+x}$. The research also investigates the optimization of crystal growth and the ...

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• (1993)
A comparison between (InAs)$\sb1$/(GaAs)$\sb1$ short-period-superlattice (SPS) and $\rm In\sb{0.5}Ga\sb{0.5}As$ alloy quantum-well structures grown on GaAs substrates has been made. Structural properties, photoluminescence ...

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• (1990)
The conduction noise from sliding charge-density waves (CDWs) is studied in NbSe$\sb3$ and K$\sb{0.3}$MoO$\sb3$ (blue bronze). A statistical analysis of the fluctuations in the noise is presented: the probability distributions ...

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• (1992)
In this thesis we address three problems associated with the mass flow and orbital hydrodynamics of $\sp3$He-A. The first concerns the form of the T = 0 mass current in local equilibrium; the second is a paradox associated ...

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• (1994)
The recent experimental results on granular superconducting films have suggested an universal sheet resistance threshold of 6.4 k$\Omega$/square, below which all films become superconducting with decreasing temperature, ...

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• (1989)
Single particle kinetic energies have been determined in solid and liquid neon and in several condensed noble gases by deep inelastic neutron scattering. The High Resolution Medium Energy Chopper Spectrometer at the Intense ...

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• (1996)
The heterojunction bipolar transistor (HBT) is a device whose time has come. The high gains, linearity, power efficiencies, current handling capabilities, and speeds available with HBT technology make this device attractive ...

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• (1994)
The realization of a two-dimensional electron gas in semiconductor heterostructures due to advanced epitaxial growth techniques has led to novel high-speed devices such as modulation-doped field effect transistors and ...

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• (1977)

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• (1996)
We generalized the method of Sankey and co-workers, which is based on the ab initio Harris functional of the local density approximation of density functional theory, by adding d orbitals into the original local orbital ...

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• (1990)
We have obtained for the first time a fairly complete two dimensional picture of interactions between two adatoms on a surface as a function of both the interatomic distance and orientation. Four different combinations of ...

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• (1964)

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• (1985)
The use of Si diffusion to disorder Al(,x)Ga(,1-x)As-GaAs quantum-well heterostructures (QWHs) and quantum-well (QW) p-n junction lasers is described. Under the proper diffusion conditions Si produces n-type conductivity ...

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