# Browse by Subject "Physics, Condensed Matter"

• (1988)
This thesis describes work on the thermodynamics and transport properties of photoexcited carriers in bulk and two-dimensional semiconductors. Two major topics are addressed.

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• (1961)

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• (1990)
We have used light scattering techniques to probe the vibrational properties of GaAs/AlAs superlattices and the dynamics of electrons in GaAs/Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As multiple quantum well structures.

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• (1984)
The work described in this thesis involves the study of optical and thermal properties of semiconductors and consists of three separate topics.

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• (1985)
A model of far infrared (FIR) dielectric response of shallow impurity states in a semiconductor has been developed and is presented for the specific case of the shallow donor transitions in high purity epitaxial GaAs. The ...

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• (1968)

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• (1971)

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• (1991)
The development of visible-spectrum semiconductor lasers is of immense economic and practical importance. Because of the extremely high efficiency of semiconductor lasers, coherent visible light sources can be made with ...

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• (1990)
In these experiments, impurity-induced layer disordering (IILD) utilizing the chemical reduction of SiO$\sb2$ by Al (from high-percentage Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As) is employed to produce Si and O to effect layer ...

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• (1996)
This work reports a systematic series of in situ spectroscopic ellipsometry (SE) studies on silicon film growth by reactive magnetron sputtering of a Si target in (Ar + H$\sb2$) at low temperatures ($\le$600$\sp\circ$C). ...

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• (1993)
This thesis work has studied systems of Bi, Pb, Ag, and Hg underpotential deposition (UPD) on Au(111) electrodes. The application of the atomic force microscope (AFM), the scanning tunneling microscope (STM), and the surface ...

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• (1985)
Experimental investigations, using x-ray diffraction techniques, have been made into the phenomenon of staging in graphite intercalation compounds. These studies have been performed in situ by means of a two-zone, ...

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• (1973)

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• (1970)

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• (1983)
We have investigated the low temperature properties of metallic glasses. We find that below 1K, the thermal conductivity of metallic glasses (Fe(,40)Ni(,40)P(,14)B(,6), Pd(,77.5)Si(,16.5)Cu(,6) and Zr(,3)Rh) is similar to ...

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• (1967)

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• (1989)
The initial stages of interface formation between various group III, IV, and V adsorbates and the Si and Ge surfaces have been examined with high resolution angle-integrated and angle-resolved photoemission spectroscopy ...

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• (1995)
Two types of integrable semiconductor lasers are investigated in this thesis. Semiconductor ring lasers with circular and square ring resonators are analyzed, and their fabrications and laser results are described. ...

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• (1985)
This thesis presents results of experiments on the interaction of phonons and photo-excited electron-hole plasmas in Ge at low temperature. The first two studies involve the low temperature fluid phase known as the ...

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• (1994)
Roughness at the interface between the well and barrier materials in quantum well systems has long been known to be an important factor determining carrier mobility in short period wells. Interface roughness (IR) has also ...

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