# Browse by Subject "Physics, Condensed Matter"

• (1995)
The ordered intermetallic Ni$\sb3$Al was used in two series of experiments that were designed to elucidate both fundamental and practical aspects of radiation damage. The first is a Transmission Electron Microscopy ...

application/pdf

PDF (5Mb)
• (1994)
Alcohol, methylamine, acetylene, and ethyl iodide decomposition on platinum single crystal surfaces have been investigated in this thesis work. The objective of this research is to examine factors affecting surface reaction ...

application/pdf

PDF (9Mb)
• (1990)
Si(100) films were doped with 100, 200, 500, and 1000 eV $\sp{11}$B$\sp+$ and $\sp{75}$As$\sp+$ ions during growth by molecular-beam epitaxy (MBE) at temperatures of 800, 650, and 500 $\sp\circ$C. Photoluminescence (PL) ...

application/pdf

PDF (4Mb)
• (1996)
We have studied resistance noise in a variety of systems exhibiting giant magnetoresistance (GMR) including coupled and uncoupled multilayers, spin-valves and granular systems. Large equilibrium 1/f noise in the resistance ...

application/pdf

PDF (4Mb)
• (1991)
We have measured the normal state resistivity of well characterized polycrystalline, twinned-single crystal, and twin-free single crystal samples of superconducting YBa$\sb2$Cu$\sb3$O$\sb{\rm 7-y}$. The resistivity was ...

application/pdf

PDF (8Mb)
• (1992)
Described in this thesis is an investigation of novel structures consisting of optoelectronic devices integrated into Fabry-Perot resonant cavities. The photosensitivity of conventional detectors is governed by the optical ...

application/pdf

PDF (6Mb)
• (1991)
Raman spectroscopy, an inelastic light scattering technique, explores III-V semiconductors by conveying crystal lattice structural information and by probing carrier dynamics both directly and via the electron-phonon ...

application/pdf

PDF (4Mb)
• (1996)
In this thesis, I present the results of a theoretical investigation of ordering processes induced by symmetry-breaking quenches in two physical systems. Both systems investigated possess a rich homotopy structure of the ...

application/pdf

PDF (8Mb)
• (1991)
Scanning tunneling microscopy (STM), photoemission spectroscopy, and a variety of other experimental techniques have been used to examine both the initial stages of interface formation between various adsorbates, as well ...

application/pdf

PDF (7Mb)
• (1994)
STM, synchrotron core-level photoemission, and RHEED were used to examine the room temperature growth of Au on Ag(110) in two separate studies. In the first study of this system, which used only core-level photoemission ...

application/pdf

PDF (8Mb)
• (1994)
Scanning tunneling microscopy (STM) has been used to study the (100) surface of GaAs and the (110) plane of cross-sectioned GaAs/AlGaAs heterolayers. Observation of the GaAs(100) surface with STM has characterized the ...

application/pdf

PDF (3Mb)
• (1991)
Scanning tunneling microscopy (STM) has been used to study the atomic and electronic structures of quasi-one-dimensional charge-density wave (CDW) materials. The two materials chosen for this study, NbSe$\sb3$ and o-TaS$\sb3$, ...

application/pdf

PDF (3Mb)
• (1992)
The Si(100) 2 x 1 surface, a technologically important surface in microelectronics and silicon molecular beam epitaxy (MBE), has been studied with the scanning tunneling microscope (STM) to attempt to clear up the controversy ...

application/pdf

PDF (3Mb)
• (1992)
The production and propagation of high-frequency acoustic phonons in silicon and GaAs are studied at low temperatures ($\le$2K) using the phonon imaging technique. In this technique, a heat source is provided by a focused ...

application/pdf

PDF (9Mb)
• (1975)

application/pdf

PDF (7Mb)
• (1996)
In this work, the water vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate light-emitting and electronic devices. High Al-composition heterostructure crystals such as Al$\sb{\rm x}$Ga\$\sb{\rm ...

application/pdf

PDF (3Mb)
• (1996)
In this work, the water-vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate small-volume semiconductor light-emitting devices. The oxidized material, native to the crystal, is mechanically and ...

application/pdf

PDF (2Mb)
• (1994)
A fully two-dimensional self-consistent quantum well laser simulator called Minilase has been developed. Both the optical and electronic device equations that describe a laser diode are discussed in detail. The dark and ...

application/pdf

PDF (3Mb)
• (1996)
Epitaxial layers of semi-insulating (SI) InP are useful for a number of optoelectronic device applications. These layers are utilized for current confinement in buried heterostructure lasers, and they have found an application ...

application/pdf

PDF (4Mb)
• (1996)
In this thesis the band alignments for wurtzite (0001) heterojunctions of AlN, GaN, and InN semiconductors are measured by x-ray photoemission spectroscopy. The bands alignments are all found to be Type I, and the valence-band ...

application/pdf

PDF (3Mb)