# Browse by Subject "Physics, Condensed Matter"

• (1977)

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• (1991)
Scanning tunneling microscopy (STM), photoemission spectroscopy, and a variety of other experimental techniques have been used to examine both the initial stages of interface formation between various adsorbates, as well ...

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• (1994)
STM, synchrotron core-level photoemission, and RHEED were used to examine the room temperature growth of Au on Ag(110) in two separate studies. In the first study of this system, which used only core-level photoemission ...

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• (1994)
Scanning tunneling microscopy (STM) has been used to study the (100) surface of GaAs and the (110) plane of cross-sectioned GaAs/AlGaAs heterolayers. Observation of the GaAs(100) surface with STM has characterized the ...

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• (1991)
Scanning tunneling microscopy (STM) has been used to study the atomic and electronic structures of quasi-one-dimensional charge-density wave (CDW) materials. The two materials chosen for this study, NbSe$\sb3$ and o-TaS$\sb3$, ...

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• (1992)
The Si(100) 2 x 1 surface, a technologically important surface in microelectronics and silicon molecular beam epitaxy (MBE), has been studied with the scanning tunneling microscope (STM) to attempt to clear up the controversy ...

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• (1971)

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• (1972)

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• (1992)
The production and propagation of high-frequency acoustic phonons in silicon and GaAs are studied at low temperatures ($\le$2K) using the phonon imaging technique. In this technique, a heat source is provided by a focused ...

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• (1975)

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• (1996)
In this work, the water vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate light-emitting and electronic devices. High Al-composition heterostructure crystals such as Al$\sb{\rm x}$Ga\$\sb{\rm ...

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• (1996)
In this work, the water-vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate small-volume semiconductor light-emitting devices. The oxidized material, native to the crystal, is mechanically and ...

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• (1960)

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• (1994)
A fully two-dimensional self-consistent quantum well laser simulator called Minilase has been developed. Both the optical and electronic device equations that describe a laser diode are discussed in detail. The dark and ...

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• (1955)

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• (1955)

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• (1996)
Epitaxial layers of semi-insulating (SI) InP are useful for a number of optoelectronic device applications. These layers are utilized for current confinement in buried heterostructure lasers, and they have found an application ...

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• (1996)
In this thesis the band alignments for wurtzite (0001) heterojunctions of AlN, GaN, and InN semiconductors are measured by x-ray photoemission spectroscopy. The bands alignments are all found to be Type I, and the valence-band ...

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• (1987)
The metalorganic chemical vapor deposition system (MOCVD) allows for the growth of ultrathin epitaxial layers of III-V semiconductor compounds. This vapor deposition process is well suited for the growth of high performance ...

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• (1994)
Rheological properties and microstructures of concentrated charge stabilized suspensions are studied in this dissertation. Suspensions containing monodispersed polystyrene particles with diameters ranging from 229 to 514 ...

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