Browse by Subject "Physics, Condensed Matter"

• (1972)

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• (1994)
Quantized semiconductor structures are presently under investigation for their physical properties and their potential for device applications. The theoretical modeling of these structures is particularly important for ...

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• (1992)
The methods presented in this thesis were developed to study the electron propagation in nanostructures with special emphasis on semiconducting materials. The essence of nanometer-scale physics is in the phase coherence ...

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• (1989)
In this thesis physical effects due to the reduced size of semiconductor devices are investigated theoretically. Effects due to statistical fluctuations and boundary conditions at heterointerfaces are examined, specifically, ...

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• (1993)
The III-V compound semiconductor devices employing quantum well (QW) structures play an essential role in the field of optoelectronics. This thesis focuses on the quantum mechanical aspects of electron dynamics and relaxation ...

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• (1992)
The valence-band structure of a semiconductor quantum well is calculated based on the multiband effective-mass theory. A unitary transformation is found to diagonalize the six-by-six Luttinger-Kohn Hamiltonian into two ...

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• (1995)
We have carried out a theoretical study of surface related phenomena for three bcc transition metals: tungsten (W), molybdenum (Mo) and vanadium (V), using a newly developed atomic potential, the fourth moment method. The ...

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• (1989)
This thesis is a study of escape from metastable wells in one and two dimensional potentials of superconducting devices. We have measured escape rates due to both thermal activation over the barrier and macroscopic quantum ...

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• (1992)
Thermal and accelerated-ion doping, with In and Sb, during Si(001) molecular-beam epitaxy were investigated as a function of growth temperature T$\sb{\rm s}$ (500-1050$\sp\circ$C), dopant energy E$\sb{\rm d}$ (thermal-500 ...

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• (1970)

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• (1968)

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• (1965)

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• (1961)

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• (1971)

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• (1969)

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• (1991)
Activation energies of thermal vacancies have been determined in hcp $\sp4$He as a function of molar volume. A sensitive strain gauge was used to measure the temperature dependence of the pressure in twenty crystals between ...

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• (1971)

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• (1977)

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• (1968)

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• (1990)
Measurements of the electron-phonon relaxation time are carried out, using both a direct and indirect method, in three dimensional films of C$\sb{1-x}$Cu$\sb x$ and Si$\sb{1-x}$Au$\sb x$ in the temperature range 0.3K-4K. ...

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