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(1986)Properties of 1/f noise (low frequency resistance fluctuations) are analyzed using the results of a number of experiments, several of which are unique to our laboratory. Measurements of thermally activated noise spectral ...
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(1984)The nature of l/f noise in semiconductors and metals has been analyzed in light of the information provided by some unique, empirically determined parameters. Measurements of the instantaneous resistivity fluctuation ...
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(1999)Void formation due to electromigration is among the most significant reliability problems in the semiconductor industry. To help gain a better understanding of the atomistic processes involved in void formation under ...
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(1984)Energy exchange mechanisms of electron and hole recombination at deep level traps in semiconductors are studied. New variations of the capacitance and current transient techniques are developed which overcome two major ...
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(1969)The effect of an electric field on exciton oscillator strengths is calculated for both bound and continuum states. The calculation is performed for Wannier excitons using the effective~mass approximation at both the Mo ...
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(2001)Fluctuation electron microscopy is a transmission electron microscopy technique for studying mediumrange order in disordered materials. We compute the variance for the image intensity of lowresolution hollowcone dark ...
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(1991)Low temperature propagation and detection of high frequency acoustic phonons in GaAs and InAs is studied. .Phonon imaging is used to study scattering of acoustic phonons in GaAs and angular dispersion of acoustic phonons ...
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(1985)A model of far infrared (FIR) dielectric response of shallow impurity states in a semiconductor has been developed and is presented for the specific case of the shallow donor transitions in high purity epitaxial GaAs. The ...
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(20120522)Three studies of thin metal films grown on semiconductor and insulator substrates are presented. Thin films grown on a substrate decorated by a periodic array of atomic wires can exhibit unusual properties such as stacking ...
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(1992)A new approach to the problem of Xray edge singularities and peaks of manybody origin observed in the optical spectra is presented. We first establish the analogy between a system of one hole interacting with many ...
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(1994)Excitonic complexes, consisting of several electronhole pairs bound by mutual Coulomb interactions, play an important role in the photoluminesence of direct and indirectgap semiconductors and semiconductor impurities. ...
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(1992)This thesis presents theoretical investigations of the sub band structure and optical properties of semiconductor quantum wires. For the subband structure, we employ multiband effectivemass theory and the effective ...
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(2000)The electrical characteristics of thin film niobium, and tunnel junctions formed between thinfilm niobium and both normal metals and semiconductors have been investigated. A thickness dependence of the superconducting ...
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(1999)Electron and hole excitations in semiconductors may be approximated as particles with effective masses which interact via Coulomb potentials. We study systems of electrons and holes with quantum Monte Carlo (QMC) techniques, ...
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(1999)Cuprous oxide is a thoroughly s~udied semiconductor with longlived, mobile excitons. The kinetic energy distribution of the excitons is reproduced in phononassisted luminescence spectra. When nonequilibrium excitons ...
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(1992)The geometric and electronic properties of compound semiconductor surfaces and interfaces were studied using experimental techniques such as electron and xray diffraction, Auger spectroscopy, synchrotron photoemission, ...
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(1992)The methods presented in this thesis were developed to study the electron propagation in nanostructures with special emphasis on semiconducting materials. The essence of nanometerscale physics is in the phase coherence ...
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(1985)This thesis consists of two parts. The first part is devoted to the study of vibrational properties of semiconducting alloys and alloy superlattices. The second part deals with deep energy levels of defects in semiconductors. In ...
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(1986)In part I, we have calculated the structural properties of Si using an iterative method and the pressure dependences of energy gaps of Si, Ge, and GaAs at symmetry points in the Brillouin zone using a variational method ...
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(1988)This thesis is devided into four selfcontained chapters. Chapters 1, and 3 deal with the electronic energy band structures of novel semiconductors and chapter 4 deals with the uniaxial stress dependence of deep substitutional ...
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Now showing items 120 of 20