Browse by Subject "STM"
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Character of the electronic states near the metal-insulator transition in Gallium Manganese Arsenide (2010-01-06)The character of electronic states near the Mott-Anderson metal-insulator transition in the ferromagnetic semiconductor Ga1-xMnxAs is studied by cross sectional scanning tunneling microscopy. 200nm thick samples grown by ...
(2002)We studied the electronic properties of silicon nanoparticles with sizes rang- ing from 2.9 to 1 nm in diameter. Using a scanning tunneling microscope we studied the electronic structure of the particles. Resonant tunneling ...