Browse by Subject "STM"

• (2010-01-06)
The character of electronic states near the Mott-Anderson metal-insulator transition in the ferromagnetic semiconductor Ga1-xMnxAs is studied by cross sectional scanning tunneling microscopy. 200nm thick samples grown by ...

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• (2002)
We studied the electronic properties of silicon nanoparticles with sizes rang- ing from 2.9 to 1 nm in diameter. Using a scanning tunneling microscope we studied the electronic structure of the particles. Resonant tunneling ...

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