Browse by Subject "Scanning Tunneling Microscopy"
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Character of the electronic states near the metal-insulator transition in Gallium Manganese Arsenide (2010-01-06)The character of electronic states near the Mott-Anderson metal-insulator transition in the ferromagnetic semiconductor Ga1-xMnxAs is studied by cross sectional scanning tunneling microscopy. 200nm thick samples grown by ...
(2013-05-24)The unique electronic and physical properties of material interfaces provide a never-ending source of novel physics and potential applications. As our ability to observe and manipulate the world transitions from the macro ...
(2010-08-20)I have combined scanning tunneling microscopy with density functional calculations and Monte Carlo simulations to investigate halogen-induced modifications of Si surfaces, including etching, roughening and step transformations. ...