# Browse by Subject "GaAs"

• (2010-01-06)
The character of electronic states near the Mott-Anderson metal-insulator transition in the ferromagnetic semiconductor Ga1-xMnxAs is studied by cross sectional scanning tunneling microscopy. 200nm thick samples grown by ...

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• (2013-05-24)
The unique electronic and physical properties of material interfaces provide a never-ending source of novel physics and potential applications. As our ability to observe and manipulate the world transitions from the macro ...

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• (1988)
Low-temperature transport properties of high-frequency acoustic phonons are investigated in GaAs, InSb, InP and InAs using the phonon-imaging technique. In this method, a focused laser beam provides a movable heat source ...

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• (2013-08-22)
Quantum dot nanostructures incorporate unique mechanical and electronic properties that dictate their use in numerous applications such as photovoltaics, LED's, and quantum computing. The \textbf{k}{$\cdot$}\textbf{p} ...

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• (2010-01-06)
The semiconductor nanowire has been widely studied over the past decade and identified as a promising nanotechnology building block with application in photonics and electronics. The flexible bottom-up approach to nanowire ...

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• (1998)
We have built a high-DC-voltage GaAs photoemission gun and used it to measure the rms transverse emittance and rms momentum spread of the highly-charged, short-duration electron bunches it generates. We report these ...

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• (1988)
This thesis describes work on the thermodynamics and transport properties of photoexcited carriers in bulk and two-dimensional semiconductors. Two major topics are addressed: I. Excitonic Phase Diagram in Si: Evidence for ...

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• (1994)
In this thesis the effects of electric and magnetic fields on the optical transmission and reflection spectra of GaAs/ AlGaAs coupled quantum wells and superlattices are investigated and their potential application in ...

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• (1989)
The III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and m1crowave device applications. Temperature dependent photo-Hall effect measurements have been made on the high ...

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• (1992)
The production and propagation of high-frequency acoustic phonons in silicon and GaAs are studied at low temperatures (~ 2K) using the phonon imaging technique. In this technique, a heat source is provided by a focused ...

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• (1988)
This thesis describes an optical study of the intersubband relaxation of carriers in GaAs multiple quantum well structures. For this investigation the application of the conventional Raman scattering technique was extended ...

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• (1986)
In part I, we have calculated the structural properties of Si using an iterative method and the pressure dependences of energy gaps of Si, Ge, and GaAs at symmetry points in the Brillouin zone using a variational method ...

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• (1993)
Gallium arsenide-silicon heterostructures combine complementary electronic and structural properties to greater technological potential. The large 4% mismatch in lattice parameter between the two semiconductors strongly ...

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