Files in this item

FilesDescriptionFormat

application/vnd.openxmlformats-officedocument.presentationml.presentation

application/vnd.openxmlformats-officedocument.presentationml.presentation1150178.pptx (19MB)
PresentationMicrosoft PowerPoint 2007

application/pdf

application/pdf3134.pdf (20kB)
AbstractPDF

Description

Title:HIGH RESOLUTION LASER SPECTROSCOPY OF THE JET-COOLED SiCF FREE RADICAL
Author(s):Rothschopf, Gretchen K.
Contributor(s):Clouthier, Dennis; Smith, Tony
Subject(s):Radicals
Abstract:The SiCF radical was produced in an electric discharge through a dilute mixture of trimethyl(trifluoromethyl)slilane (CH$_{3}$)$_{3}$SiCF$_{3}$ in high-pressure argon. Using our high-resolution pulse amplified ring dye laser system, the laser induced fluorescence of the 0-0 band of the \~{A}$^{2}$$\Sigma$$^{+}$- \~{X}$^{2}$$\Pi$$_{i}$ transition has been rotationally resolved (linewidths ~ 0.015 cm$^{-1}$) for the first time. The subsequent rotational analysis paired with previous ab initio calculations$^{a}$ allowed the determination of the ground and excited state SiC bond lengths. We find a Si-C double bond in the ground state and an unusual Si-C triple bond in the excited state. Finally, further low-resolution spectra were obtained to determine better values for the excited state vibrational frequencies. $^{a}$C. J. Evans and D. J. Clouthier, J. Chem. Phys., 117, 6439-6445 (2002)
Issue Date:06/20/18
Publisher:International Symposium on Molecular Spectroscopy
Citation Info:APS
Genre:Conference Paper / Presentation
Type:Text
Language:English
URI:http://hdl.handle.net/2142/100548
DOI:10.15278/isms.2018.WD07
Other Identifier(s):WD07
Date Available in IDEALS:2018-08-17
2018-12-12


This item appears in the following Collection(s)

Item Statistics