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Title:Direct tunneling modulation and signal mixing of semiconductor lasers
Author(s):Qiu, Junyi
Director of Research:Feng, Milton
Doctoral Committee Chair(s):Feng, Milton
Doctoral Committee Member(s):Dallesasse, John; Dragic, Peter; Jin, Jianming
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Compound semiconductor
transistor
laser
transistor laser
tunneling
Abstract:The transistor laser invented by Feng and Holonyak is a unique device that bridges the gap between high-speed III-V compound semiconductor transistors and high-speed semiconductor lasers. In a highly integrated fashion, the transistor laser is capable of simultaneous transistor electrical operation and electron-to-photon conversion. The three-terminal transistor structure has the potential to overcome the diode laser’s modulation speed limit by further reducing the carrier recombination lifetime. In addition, a recently discovered tunneling mechanism inside the transistor laser device structure paves the way for ultrahigh-speed direct modulation of laser optical output. In this work, the operation of the transistor laser is reviewed and compared against the conventional diode laser; both current modulation and tunneling modulation of the transistor laser are formulated and analyzed, which leads to the demonstration of direct photonic signal mixing. This work establishes the fundamentals of the transistor laser device operation and presents the transistor laser as an integrated, multi-functional optoelectronic device.
Issue Date:2019-12-04
Type:Text
URI:http://hdl.handle.net/2142/106366
Rights Information:Copyright 2019 Junyi Qiu
Date Available in IDEALS:2020-03-02
Date Deposited:2019-12


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