Files in this item

FilesDescriptionFormat

application/pdf

application/pdfMICHAELS-THESIS-2020.pdf (1MB)Restricted Access
(no description provided)PDF

Description

Title:Metal-assisted chemical etching of 4H silicon carbide
Author(s):Michaels, Julian Arthur
Advisor(s):Li, Xiuling
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:M.S.
Genre:Thesis
Subject(s):SiC
Metal-assisted Chemical Etch, porous silicon carbide, photochemical, Etching, nanotechnology, nanosphere lithography
Abstract:Metal-assisted chemical etching (MacEtch) is a wet etching method that can produce high aspect ratio nanostructures with minimal crystal damage. The MacEtch process has been demonstrated to overcome limitations of dry and wet etching in several materials, studied extensively since its discovery by Li and Bohn in 2000. These include several semiconductor substrates (Si, GaAs, InP, GaP, GaN, Ga2O3, and SiC) and catalysts (Au, Ag, Pt, Pd, graphene, Cu), each demonstrated with different degrees of anisotropy, porosity, and etching conditions. SiC has only ever been demonstrated to etch with a porous layer generated using a wet etching method. This is a serious limitation for its applicability to a wider range of etching applications. In this thesis, nanoscale nonporous wet etching is demonstrated on 4H-SiC. Both photolithography and nanosphere lithography are used to pattern the substrate, being compared in etch quality and characteristics. Control of porosity and etch rate are presented, with a mechanism analysis provided to complement the explanations in the literature.
Issue Date:2020-05-12
Type:Thesis
URI:http://hdl.handle.net/2142/108347
Rights Information:Copyright 2020 Julian Michaels
Date Available in IDEALS:2020-08-27
Date Deposited:2020-05


This item appears in the following Collection(s)

Item Statistics