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Title:Modeling of photocurrent spectra induced by nonlinear absorption in high-indium-content iii-nitride disk-in-wire photodiode
Author(s):Hsiao, Fu-Chen
Director of Research:Dallesasse, John Michael
Doctoral Committee Chair(s):Dallesasse, John Michael
Doctoral Committee Member(s):Feng, Milton; Chang, Yia-Chung; Bayram, Can
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):III-Nitride
Quantum Dot
photodiode
Quantum wire
Abstract:Research on semiconductor quantum structures has raised many interesting questions about fundamental physics and potential applications in many fields. By utilizing the physical properties induced by quantum structure in semiconductors, which depend on the dimension of the systems, one can gain many advantages on semiconductor devices. The most evident related to the industrial application is the change of the density of states of the semiconductor with quantum structure. Semiconductor lasers based on quantum wells (QWs) have been proven to provide higher gain and better performance than traditional heterojunction lasers. The threshold current for quantum dot (QD) lasers has been shown to improve significantly, and the delta-like density of states of QDs has shown higher temperature stability. Recently, the miniaturization of electronic devices, the emergence of III-V compound semiconductors in optoelectronics applications, and the development of quantum device structures have taken the technology of semiconductor materials and structures to a point where continuing advances can only come from the improved understanding and control of the material system. Various theoretical models and techniques have been proposed to explain and predict the electronic band structure, optical properties, and transport properties of semiconductor devices with quantum structure. However, an accurate and efficient tool that can conduct systematic analysis for semiconductor devices is not yet available for many cases due to the physical limitations of developed models or computational costs. As a result, in this dissertation, we present novel approaches to help with comprehensively investigating not only the material properties but also the characteristics of devices under operation. In this dissertation, we study the electric, optical, and transport properties in various novel semiconductor-based devices, including transistor-injected quantum cascade laser (TI-QCL) and quantum disk-in-wire photodiode. We study the injection efficiency in the superlattice region in the TI-QCL by using non-equilibrium Green's function (NEGF). As for the quantum disk-in-wire photodiode, we developed a band structure calculation method based on an effective bond-orbital model (EBOM). The model is incorporated with the transport model to investigate the photocurrent spectrum in the device.
Issue Date:2021-04-15
Type:Thesis
URI:http://hdl.handle.net/2142/110661
Rights Information:Copyright 2021 Fu-Chen Hsiao
Date Available in IDEALS:2021-09-17
Date Deposited:2021-05


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