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Title:Detailed Analysis Of The Infrared Spectrum Of Sif4: An Update
Author(s):Boudon, Vincent
Contributor(s):Manceron, Laurent
Subject(s):Atmospheric science
Abstract:\begin{wrapfigure}{r}{0pt} \includegraphics[scale=0.2]{Fig_nu4.eps} \end{wrapfigure} Silicon tetrafluoride (SiF$_4$) should be a normal trace component of volcanic gases. However, a better knowledge of spectroscopic parameters is needed for this molecule in order to derive accurate concentrations. As explained last year, we undertook an extensive high-resolution study of its infrared absorption bands, for the there isotopologues in natural abundance: ${}^{28}$SiF$_4$ (92.23~\%), ${}^{29}$SiF$_4$ (4.67~\%) and ${}^{30}$SiF$_4$ (3.10~\%). We present here an update of this study. It includes a new global fit with consistent parameter sets for the ground and excited states (the Figure on the right presents the $\nu_4$ bending fundamental region). In particular, all existing rotational line data have been included. The $2\nu_4$ band of ${}^{28}$SiF$_4$ could also be analyzed in detail. A first rough estimates of the dipole moment derivative for the $\nu_3$ band has been performed, leading to to an integrated band intensity which is consistent with literature values, around $680$~km$/$mol. The isotopic dependance of band centers and Coriolis parameters has been studied, thanks to the formula presented in talk P4363.
Issue Date:2021-06-24
Publisher:International Symposium on Molecular Spectroscopy
Genre:Conference Paper / Presentation
Date Available in IDEALS:2021-09-24

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