Modeling and optimization of the transistor laser operation

Abstract

This thesis describes theoretically the operation of the Transistor Lasers (TLs) from two perspectives. First, the charge control model is introduced to provide the electron characteristics in the base of the TLs. The model shows that the quantum wells (QWs) serve as electron traps to reduce the electrical gain and produce an optical gain. Based on the analysis on the charge control model, the optical gain can be modulated by the cladding structure of the base. Second, the radiative recombination is analyzed from the first principles. The results indicate that the radiative recombination saturates in degenerately doped cases, where Auger recombination becomes dominant and deteriorates the quantum efficiency. Finally, this thesis proposes a novel turn-off mechanism for the TLs, which achieves good efficiency and fast response at the same time.