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Title:Heterogeneous integration and characterization of III-V materials on silicon for active and passive photonic device arrays
Author(s):Carlson, John A.
Director of Research:Dallesasse, John M.
Doctoral Committee Chair(s):Dallesasse, John M.
Doctoral Committee Member(s):Feng, Milton; Carney, P. Scott; Bayram, Can; Lee, Minjoo Lawrence
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Heterogeneous Integration, Silicon Photonics, Gallium Arsenide, Gallium Nitride, Light-Emitting Transistors, Vertical Cavity Surface Emitting Lasers, Quantum Memory
Abstract:The heterogeneous integration of III-V epitaxial materials on silicon (100) and the demonstration of novel active and passive photonic device arrays patterned into the integrated materials are presented. III-V epitaxial material is prepared on a silicon carrier wafer using an epitaxial bonding process that creates a mesh of individual thin-film epitaxial dies at the spacing of photonic devices, each fine-aligned with micron-scale photolithographic accuracy without the requirement of discrete die-alignment. A metal-eutectic interconnect of either aluminum-germanium or aluminum-silicon is established between the III-V epitaxial material and a silicon host wafer (CMOS), culminating in an epitaxial transfer process that permanently bonds aligned III-V material using only CMOS-compatible techniques. The resulting metal interconnect between III-V and silicon is investigated for its behavior as an electrical path, thermal sink, mechanical bond, and as an optically reflecting plane for photonic devices. GaAs-based epitaxial materials are shown using this process and the resulting III-V material array is formed into light-emitting transistors (LET) and vertical cavity surface emitting lasers (VCSEL). These devices, fabricated within CMOS-compatiblity, are compared to their monolithic counterpart and characterized for their optical and electrical performance as an array of heterogeneously integrated devices. The function and design of using LETs and VCSELs for GaAs-based active photonic devices in electronic-photonic circuitry is discussed. GaN-based epitaxial materials for HEMT-based structures and passive photonics are also shown to be heterogeneously integrable using a high-reflectance bond that extends the integration process to allow for iteration across multiple epitaxial designs onto one silicon host. An additional GaN-based passive photonic material is discussed that allows for novel forms of passive photonic structures and optically controlled effects. Passive GaN:Mn materials are magnetically, optically, and electronically characterized as a three-level material, followed by the demonstration of photogenerated ferromagnetism at room temperature in p-i-n GaN:Mn structures. The design of a nonclassical quantum memory device using photogenerated magnetism in optimized p-i-n GaN:Mn passive structures is discussed. The nonlinear optical controls and energy band-structure engineering for this ferrophotonic memory are simulated for how they allow resonance between atomic transitions in GaN:Mn and optical pulses from active photonic devices. The resulting passive device materials are shown to be suitable for heterogeneous integration as passive waveguiding structures that situate between active photonic devices made from GaAs and other III-V materials. The combination of heterogeneous integration techniques and fabrication of integrated photonic devices presents a path forward for electronic-photonic-magnetic circuitry design.
Issue Date:2021-08-30
Type:Thesis
URI:http://hdl.handle.net/2142/114042
Rights Information:Copyright 2021 John A. Carlson
Date Available in IDEALS:2022-04-29
Date Deposited:2021-12


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