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Low-Temperature Chemical Vapor Deposition of Ruthenium and Manganese Nitride Thin Films

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Title: Low-Temperature Chemical Vapor Deposition of Ruthenium and Manganese Nitride Thin Films
Author(s): Lazarz, Teresa S.
Doctoral Committee Chair(s): Abelson, John R.
Doctoral Committee Member(s): Girolami, Gregory S.; Rockett, Angus A.; Braun, Paul V.; Earles, Susan K.
Department / Program: Materials Science and Engineering
Discipline: Materials Science and Engineering
Degree Granting Institution: University of Illinois at Urbana-Champaign
Degree: Ph.D.
Genre: Dissertation
Subject(s): CVD chemical vapor deposition ruthenium manganese nitride Ru Mn-N film deposition
Abstract: Materials and thin film processing development has been and remains key to continuing to make ever smaller, or miniaturized, microelectronic devices. In order to continue miniaturization, conformal, low-temperature deposition of new electronic materials is needed. Two techniques capable of conformality have emerged: chemical vapor deposition (CVD) and atomic layer deposition (ALD). Here, two processes for deposition of materials which could be useful in microelectronics, but for which no low-temperature, conformal process has been established as commercializable, are presented. One is ruthenium, intended for use in interconnects and in dynamic random access memory electrodes, a known material for use in microelectronics but for which a more conformal, yet fast process than previously demonstrated is required. The other is manganese nitride, which could be used as active magnetic layers in devices or as a dopant in materials for spintronics, which is not yet established as a desired material in part due to the lack of any previously known CVD or ALD process for deposition.
Issue Date: 2009-09-25
Genre: Dissertation / Thesis
Type: Text
Language: English
URI: http://hdl.handle.net/2142/13834
Publication Status: unpublished
Peer Reviewed: not peer reviewed
Date Available in IDEALS: 2009-09-25
 

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