# Browse Dept. of Materials Science and Engineering by Title

• (1995)
The ordered intermetallic Ni$\sb3$Al was used in two series of experiments that were designed to elucidate both fundamental and practical aspects of radiation damage. The first is a Transmission Electron Microscopy ...

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• (1997)
Radiation enhanced diffusion of O$\sp{18}$, Ca and Zn buried tracer layers in MBE grown MgO was measured following irradiation with either 2.0 MeV Kr or 1.0 MeV Ne, He or H from 30 to 1500$\sp\circ$C. This represents the ...

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• (1990)
Rapid solidification (RS) studies have been performed on various Ti-Cu (2-10 wt.%) alloys with and without 2.5 wt.% Er additions. Rapid solidification was effected by laser surface melting and/or centrifugal atomization. ...

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• (2004)
I show that high-flux low-energy Ar+ ion irradiation during RDE growth dramatically increases the area fraction of untwinned regions from 0.17 in films grown under standard magnetically balanced conditions in which the ...

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• (2001)
Si0.7Ge0.3(001) layers were grown at Ts = 450°C, where strain-induced roughening is completely quenched, to thicknesses greater than the critical value for misfit dislocation formation (tc ≃ 100 nm) to probe the ...

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• (1995)
Solid state reactions between 1000A thick Nickel films and 4000A thick amorphous Si$\sb{\rm 1-x}$Ge$\sb{\rm x}$ films, deposited with the Molecular Beam Epitaxy (MBE) technique, are examined with the novel use of two in-situ ...

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• (1994)
A new highly selective reactive ion etching process based on HBr plasma for the removal of InGaAs over InAlAs has been developed and the results are presented. The etch selectivity at a self-bias voltage of $-$100 V is ...

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• (1994)
A new, optically enhanced reflection infrared spectroscopy technique is presented to study thin film growth in real time. Here, real time means under actual processing conditions, with a short data acquisition time compared ...

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• (2014-01-16)
The rational design of effective and safe non-viral gene vectors is largely dependent on the understanding of the structure-property relationship. This thesis aims to report the design of a new series of cationic, α-helical ...

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• (2001)
High-quality ZrB2 thin films have been deposited at substrate temperatures as low as 300°C by a new method: remote hydrogen plasma chemical vapor deposition from the single-source precursor zirconium borohydride, Zr(BH ...

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• (1990)
Si(100) films were doped with 100, 200, 500, and 1000 eV $\sp{11}$B$\sp+$ and $\sp{75}$As$\sp+$ ions during growth by molecular-beam epitaxy (MBE) at temperatures of 800, 650, and 500 $\sp\circ$C. Photoluminescence (PL) ...

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• (1995)
This study combines rheology, scanning electron microscopy (SEM) and cement hydration studies as well as theoretical modeling to gain fundamental understanding about the microstructure, its control of flow behavior, its ...

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• (2014-09-16)
Single walled carbon nanotubes (SWNTs) have garnered substantial interest in the electronic materials research community due to their unparalleled intrinsic electrical properties. In particular, aligned arrays of SWNTs ...

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• (2015-01-21)
The goal of this dissertation is to identify, and understand the role of, growth inhibitors in the nucleation and growth of thin films by chemical vapor deposition (CVD). We focus on steady state processing methods using ...

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• (1995)
The effects on microstructure and microchemistry of ion irradiation during AlCu film growth on a-SiO$\sb2$ by two directional sputtering techniques--collimated magnetron sputter deposition (CMSD) and ionized magnetron ...

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• (2014-01-16)
Phase change materials, such as Ge2Sb2Te5 (GST), are used as the active recording media in current optical storage and upcoming solid state memories because of their remarkable properties. They can be rapidly and reversibly ...

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• (2014-05-30)
Perovskite ceramics are used in a plethora of applications, including electroceramics, superconductors, semiconductors, refractories, catalysts, magnetoresistors, proton conductors, and substrates for semiconductor ...

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• (2004)
In Bi-containing solder interfacial system, we found that Bi segregated to the Cu-intermetallic interface during aging in SnBi/Cu interconnect. This caused serious embrittlement of Sn-Bi/Cu interface. Further aging induced ...

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• (2011-05-25)
Nanometer scale metals are of great interest due to their potential applications in the future of molecular/atomic scale devices. For example, nanometer scale metal contacts on semiconducting single-walled carbon nanotubes ...

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• (2017-06-26)
This dissertation demonstrates the dry contact transfer of atomically precise graphene nanoribbons onto H:Si(100) under ultra-high vacuum, detailed electronic characterization, and electron-mediated polymerization of ...

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