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Title:Performance Analysis of Double Gate MOSFET Using Monte Carlo Simulation
Author(s):Ismail, Fawad H.
Advisor(s):Ravaioli, Umberto
Contributor(s):Ravaioli, Umberto
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:M.S.
Genre:Thesis
Subject(s):performance
drain current
double gate
mosfet
monte carlo
modeling
simulation
theoretical
misalignment
quantum correction
schrodinger equation
gate oxide
dielectric constant
short channel effects
boltzmann transport equation
band structure
finite difference
volume inversion
high-K
thermal analysis
phonons
Abstract:In this thesis, we explore the performance characteristics, speci cally the drain current drive, of the double gate silicon MOSFET device, using MoCa, the Monte Carlo simulator. Drain current performance is analyzed as a result of varying di erent parameters like oxide thickness, dielectric constant, and misalignment of top and bottom gates. An interesting result is obtained in the misalignment analysis, according to which overlap with source increases the drain current, even in the presence of drain underlap. Misalignment can be tolerable in devices up to a certain extent depending on the application. High- dielectrics and small oxide thickness are shown to improve the current drive. Comparison is made between quantum-corrected and classical simulation results. Change in potential and concentration pro les in the quantum-corrected simulation is the result of coupling between the Schr odinger and the Poisson equations. The drain current increase compared to a conventional MOSFET of the same dimensions and materials is shown to be signi cant. Main features of the full band quantum-corrected Monte Carlo simulator are delineated and its signi cance at the mesoscopic scale is discussed. Finally recent research on electrothermal analysis is reviewed and its importance in relation to the current work is explained. An outline of possible future work is presented for both the simulator and the device.
Issue Date:2010-01-06
URI:http://hdl.handle.net/2142/14639
Rights Information:Copyright 2009 Fawad Hassan Ismail
Date Available in IDEALS:2010-01-06
Date Deposited:December 2


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