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Title:Reduction of Line Edge Roughness in Semiconductor Photoresist by Means of a Grazing Incidence Ion Beam
Author(s):Struck, Corey R.
Advisor(s):Ruzic, David N.
Contributor(s):Ruzic, David N.
Department / Program:Nuclear Plasma and Radiological Engineering
Discipline:Nuclear Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:M.S.
Genre:Thesis
Subject(s):Line Edge Roughness
Line Width Roughness
Abstract:As semiconductor feature sizes continue to decrease, the phenomena of line edge roughness (LER) becomes more disruptive in chip manufacturing. While many efforts are underway to decrease LER from the photoresist, post-develop smoothing techniques may be required to continue shrinking chip features economically. This work reports on one such method employing the use of an ion beam at grazing incidence along the features. This method smooths relatively long spatial length LER, a potential advantage over other smoothing techniques that focus on just molecular scale LER. LER reduction numbers Variables include beam energy and angular dependence. LER measurements are taken using Hitachi image analysis software on top-down analytical SEM measurements.
Issue Date:2010-01-06
URI:http://hdl.handle.net/2142/14655
Rights Information:Copyright 2009 Corey R. Struck
Date Available in IDEALS:2010-01-06
Date Deposited:December 2


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