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Title:Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition
Author(s):Dowdy, Ryan S.
Advisor(s):Li, Xiuling
Contributor(s):Li, Xiuling
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:M.S.
Genre:Thesis
Subject(s):nanowire
VLS
III-V
quantum dot
gaas
offcut
suspended
zinc
inas
nanostructure
movpe
mocvd
Abstract:Planar <110> GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of the wire that is dependent on Zn/Ga gas phase molar ratios. Planar nanowires grown on suspended thin films give insight into the mobility of the seed particle and change in growth direction. Nanowires that were grown on the off-cut sample exhibit anti-parallel growth direction changes. Quantum dots are grown on suspended thin films and show preferential growth at certain temperatures. Envisioned nanowire applications include twin-plane superlattices, axial pn-junctions, nanowire lasers, and the modulation of nanowire growth direction against an impeding barrier and varying substrate conditions.
Issue Date:2010-01-06
URI:http://hdl.handle.net/2142/14672
Rights Information:Copyright 2009 Ryan S. Dowdy
Date Available in IDEALS:2010-01-06
Date Deposited:December 2


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