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Title:Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control
Author(s):Bassett, Kevin P.
Advisor(s):Li, Xiuling
Contributor(s):Li, Xiuling
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:M.S.
Genre:Thesis
Subject(s):Metal-organic chemical vapor deposition (MOCVD)
Organometallic vapor phase epitaxy (OMVPE)
Metalorganic vapour phase epitaxy (MOVPE)
Abstract:Metalorganic chemical vapor deposition is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound semiconductor material are explained and data from recent commissioning work on a newly installed reactor at the University of Illinois is presented.
Issue Date:2010-01-06
URI:http://hdl.handle.net/2142/14733
Rights Information:Copyright 2009 Kevin P. Bassett
Date Available in IDEALS:2010-01-06
2012-01-07
Date Deposited:December 2


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