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Title:Characteristics, Theory and Modeling of the Transistor Laser
Author(s):Then, Han Wui
Director of Research:Feng, Milton
Doctoral Committee Chair(s):Feng, Milton
Doctoral Committee Member(s):Holonyak, Nick, Jr.; Cheng, Keh-Yung; Jin, Jianming; Hsieh, Kuang-Chien
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):transistor laser
light-emitting transistor
heterojunction bipolar transistor
diode laser
quantum well
differential gain
recombination
current gain
tunnel junction
Abstract:The transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and unique three-terminal electrical-optical characteristics for direct “read-out” of its optical properties. These potentially lead to advantageous and useful features for designing high-speed optical transmitters that operate without the limitations of resonance, a feature common in the operation of semiconductor (two-terminal) diode lasers. The characteristics of the transistor laser are studied by considering the charge transport, and the coupling of the photon and quantum-mechanical electron-hole recombination dynamics in the operation of the transistor laser. An analytical understanding of these physical characteristics is developed based on experimental data, and a computational model of the transistor laser is developed for device engineering and circuit design applications.
Issue Date:2010-01-06
URI:http://hdl.handle.net/2142/14740
Rights Information:Copyright 2009 Han Wui Then
Date Available in IDEALS:2010-01-06
2012-01-07
Date Deposited:December 2


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