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Characteristics, Theory and Modeling of the Transistor Laser

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Title: Characteristics, Theory and Modeling of the Transistor Laser
Author(s): Then, Han Wui
Director of Research: Feng, Milton
Doctoral Committee Chair(s): Feng, Milton
Doctoral Committee Member(s): Holonyak, Nick, Jr.; Cheng, Keh-Yung; Jin, Jianming; Hsieh, Kuang-Chien
Department / Program: Electrical & Computer Eng
Discipline: Electrical & Computer Engr
Degree Granting Institution: University of Illinois at Urbana-Champaign
Degree: Ph.D.
Genre: Dissertation
Subject(s): transistor laser light-emitting transistor heterojunction bipolar transistor diode laser quantum well differential gain recombination current gain tunnel junction
Abstract: The transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and unique three-terminal electrical-optical characteristics for direct “read-out” of its optical properties. These potentially lead to advantageous and useful features for designing high-speed optical transmitters that operate without the limitations of resonance, a feature common in the operation of semiconductor (two-terminal) diode lasers. The characteristics of the transistor laser are studied by considering the charge transport, and the coupling of the photon and quantum-mechanical electron-hole recombination dynamics in the operation of the transistor laser. An analytical understanding of these physical characteristics is developed based on experimental data, and a computational model of the transistor laser is developed for device engineering and circuit design applications.
Issue Date: 2010-01-06
URI: http://hdl.handle.net/2142/14740
Rights Information: Copyright 2009 Han Wui Then
Date Available in IDEALS: 2010-01-06
2012-01-07
Date Deposited: December 2
 

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