Files in this item



application/pdf1969_blouke.pdf (2MB)Restricted to U of Illinois
Current oscillations in long Zn doped Si p-i-n diodesPDF


Title:Current oscillations in long Zn doped Si p-i-n diodes
Author(s):Blouke, Morley Matthews
Department / Program:Physics
Subject(s):p-i-n diodes
Abstract:Long Zn-doped Si p-i-n diodes exhibit large amplitude, sinusoidal, current oscillations in the positive resistance position of the I-V characteristic. These oscillations occur in the temperature range from ~150oK to ~2l0 oK. Over this temperature range, the frequency of oscillation varies nearly three orders of magnitude, from ~1 kHz to ~ 1MHz. Preceding the oscillations, these devices exhibit two-carrier space-change-limited conduction typical of long p-i-n diodes. This is interpreted in terms of the cube-law injected plasma theory of Lampert and Rose. It is shown that the critical parameter for the initiation of the oscillations is the presence of a minimum free carrier concentration in the intrinsic region. The solid solubility of Zn in Si is extended nearly two orders of magnitude over that previously known, to include the temperature range 800 o C to 1000 o C.
Issue Date:1969
Genre:Dissertation / Thesis
Other Identifier(s):6074479
Rights Information:© 1969 Morley Matthews Blouke
Date Available in IDEALS:2010-07-27

This item appears in the following Collection(s)

Item Statistics