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Title:Process Development for High Speed Transistor Laser Operation
Author(s):James, Adam L.
Director of Research:Feng, Milton
Doctoral Committee Chair(s):Feng, Milton
Doctoral Committee Member(s):Holonyak, Nick, Jr.; Jin, Jianming; Schutt-Ainé, José E.
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Transistor Laser
Abstract:The transistor laser (TL) o ers advantages over conventional diode laser structure. The TL uses high base doping and minority carrier collection to reduce the recombination lifetime in the active region of the device to <30 ps. A fast recombination lifetime <30 ps reduces the photon-carrier resonance when modulating the device at RF frequencies. However, the transistor laser with high intrinsic optical speed is limited by more than just internal recombination lifetime; it is also limited by parasitic resistances and capacitances. Small signal bandwidth of 20 GHz and digital modulation of 20 Gbit/s was obtained by reducing or eliminating extrinsic parasitics which limit device performance through the optimization of device geometry and process conditions.
Issue Date:2011-01-21
Rights Information:Copyright 2010 Adam James
Date Available in IDEALS:2011-01-21
Date Deposited:2010-12

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