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Title:Transient phase change effect in phase change memory devices
Author(s):Yeo, Eng Guan
Director of Research:Adesida, Ilesanmi
Doctoral Committee Chair(s):Adesida, Ilesanmi
Doctoral Committee Member(s):Jain, Kanti; Kim, Kyekyoon; Bishop, Stephen G.
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):phase change memory
Phase change random access memory (PCRAM)
transient effect
Abstract:Phase change random access memory (PCRAM) is a leading contender for next generation nonvolatile memory. The phase change mechanism from high resistance amorphous phase to low resistance crystalline phase in nano-timescale is the most important characteristic of these materials. However, full understanding of the mechanism is still not achieved. Two time parameters were identified from the transient waveform, namely the delay and current recovery times. The link between crystallization kinetics and the transient phase change effect was established by associating nucleation with delay time and growth with current recovery time. Real-time crystallization characterization was achieved. Parasitic capacitance had strong implications on the programming performance of PCRAM. Larger parasitic capacitance results in a larger leakage current, and hence higher applied voltage for RESET operation needs to be applied. The larger parasitic capacitance also results in an increased quenching time due to a longer voltage fall time, which results in a partially crystallized amorphous state. Continuing work is studying the effect of filament formation on phase change. Filament formation is linked to the actual operating performance of the PCRAM device. This link is important in understanding how phase change occurs electrically and whether filament formation has any effect on scaling of PCRAM devices.
Issue Date:2011-01-21
Rights Information:Copyright 2010 Eng Guan Yeo
Date Available in IDEALS:2011-01-21
Date Deposited:2010-12

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