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Title:Optical study of InP related semiconductor alloys;spectroscopic ellipsometry
Author(s):Lee, Hosun
Doctoral Committee Chair(s):Klein, Miles V.
Department / Program:Physics
Discipline:Physics
Degree:Ph.D.
Genre:Dissertation
Subject(s):optical physics
InP
semiconductor alloys
Abstract:In this thesis, spectroscopic ellipsometry is used to study the effects of disorder, self-ordering, strain, and dopants on electronic band structure of InxGal-xP grown on GaAs, InxGa1_xP grown on GaP substrate with composition-graded InGaP buffer layer and lattice matched (AlxGa1_x)o.sino.sP grown on GaAs semiconductor alloys with assistance from measurements of Raman spectroscopy and transmission electron microscopy. Our studies of InxGal-xP/(GaAs, graded GaP) and (AlxGal-x)o.sino.sP/GaAs heteroepitexiallayers principally demonstrate the efficacy of using spectroscopic ellipsometry to probe the modulations of critical points, the high symmetry points of electronic band structure, which are caused by long( or short) range ordering, misfit strain, defects, or dopants. For example, in the case of ordered and doped Ino.sGao.sP/GaAs materials, the amplitudes and peak positions of the signal of the E1 critical point decrease as CuPt-type ordering increases whereas the linewidths and phases strongly correlate with dopant concentrations. In contrast, the same properties of E2 critical points decrease as CuPt-type ordering increases. We attribute this ordering dependent correlation of critical point parameters to the formation of a spontaneous (111) InP/GaP superlattice. We also studied the effect of misfit strain on the E1 critical point parameters of 1 ~m thick InxGal-xP/GaAs (0.4~~0.6) as a function of In composition. We observed near cancellation of In composition dependence of the E1 peak position by the effect of misfitstrain, and also found that the linewidth of the E1 peak broadens rapidly in those compositions under tensile stress even below the critical thickness, where elastic energy originating from misfit strain relaxes generating defects, e. g. microcracks. Finally, the investigation of the critical points of the E1 and E2 gaps of (AlxGal-x)o.sino.sP/GaAs leads to the conclusion that the electronic charge distributions of Ga-P and Al-P bonds may be similar because their critical point parameters linearly interpolate bet•ween those of the endpoint ternaries, Gao.sino.sP and Alo.sino.sP. There is at present no agreement for InxGal-xP alloys on the value of the crossover composition, Xc, of the direct and indirect gaps and whether the L1c must be included among f'1c and Xlc· The quasi-direct transitions ofEu and Ex3 observed by ellipsometry favor the two conduction band model. We also discuss the origin of the quasi-direct transitions. In addition, the mode behavior of optic phonons in the InxGa1_xP alloys is controversial. Using Raman spectroscopy, we studied the LO phonon-plasmon interaction of the doped Ino.sGao.sP/GaAs alloys and found that one mode behavior is a more appropriate description than two mode behavior.
Issue Date:1993-10
Genre:Dissertation / Thesis
Type:Text
Language:English
URI:http://hdl.handle.net/2142/18866
Rights Information:1993 Hosun Lee
Date Available in IDEALS:2011-04-25
Identifier in Online Catalog:3644707


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