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Title:Low-temperature magnetophotoluminescence characterization of high-purity gallium arsenide and indium phosphide
Author(s):Bose, Sabya Sachi
Doctoral Committee Chair(s):Stillman, Gregory E.
Department / Program:Physics
Discipline:Physics
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Electrical Engineering
Condensed Matter Physics
Materials Science Engineering
Abstract:Low-temperature magneto-photoluminescence is a very powerful technique to characterize high purity GaAs and InP grown by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding energy differences of acceptors in GaAs and InP make possible the identification of those impurities by low-temperature photoluminescence without the use of any magnetic field. However, the sensitivity and resolution provided by this technique remains inadequate to resolve the minute binding energy differences of donors in GaAs and InP. To achieve higher sensitivity and resolution needed for the identification of donors, a magneto-photoluminescence system is installed along with a tunable dye laser, which provides resonant excitation. Donors in high purity GaAs are identified from the magnetic splittings of "two-electron" satellites of donor bound exciton transitions in a high magnetic field and at liquid helium temperature. This technique is successfully used to identify donors in n-type GaAs as well as in p-type GaAs in which donors cannot be identified by any other technique. The technique is also employed to identify donors in high purity InP.
The amphoteric incorporation of Si and Ge impurities as donors and acceptors in (100), (311)A and (311)B GaAs grown by molecular beam epitaxy is studied spectroscopically. The hydrogen passivation of C acceptors in high purity GaAs grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) is investigated using photoluminescence. Si acceptors in MBE GaAs are also found to be passivated by hydrogenation. The instabilities in the passivation of acceptor impurities are observed for the exposure of those samples to light. Very high purity MOCVD InP samples with extremely high mobility are characterized by both electrical and optical techniques. It is determined that C is not typically incorporated as a residual acceptor in high purity MOCVD InP.
Finally, GaAs on Si, single quantum well, and multiple quantum well heterostructures, which are fabricated from III-V semiconductors, are also measured by low-temperature photoluminescence.
Issue Date:1989
Type:Text
Language:English
URI:http://hdl.handle.net/2142/19028
Rights Information:Copyright 1989 Bose, Sabya Sachi
Date Available in IDEALS:2011-05-07
Identifier in Online Catalog:AAI8924774
OCLC Identifier:(UMI)AAI8924774


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