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Title:Residual lattice defects in silicon(100) films doped with low-energy positive boron and positive arsenic ions during growth by molecular-beam epitaxy: Variation with ion energy and growth temperature
Author(s):Noel, Jean-Paul Francis
Doctoral Committee Chair(s):Greene, Joseph E.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Physics, Condensed Matter
Engineering, Materials Science
Abstract:Si(100) films were doped with 100, 200, 500, and 1000 eV $\sp{11}$B$\sp+$ and $\sp{75}$As$\sp+$ ions during growth by molecular-beam epitaxy (MBE) at temperatures of 800, 650, and 500 $\sp\circ$C. Photoluminescence (PL) and deep level transient spectroscopy (DLTS) were used to assess optical and electronic film quality by identifying and measuring concentrations of ion-induced and inherent residual lattice defects. Bulk-like PL spectra containing sharp, intense, dopant bound-exciton (BE) peaks were consistently obtained from films grown at the highest temperature and lowest ion energy, and no majority-carrier traps were detected by DLTS. For B$\sp+$ ion doping, decreasing the growth temperature from 800$\sp\circ$C or increasing the ion energy from 100 eV caused a suppression in the intensity of sharp, B-BE PL peaks, with an accompanying increase in the concentration of residual lattice defects. In contrast, intensities of As-BE PL peaks from As$\sp+$ ion doped films were relatively constant for growth temperatures $\sb-$650$\sp\circ$C irrespective of ion energy. Ion doping with either B$\sp+$ or As$\sp+$ during growth at 500$\sp\circ$C resulted in films whose PL spectra showed no appreciable BE luminescence and a large background signal at low PL energies. The latter feature was also observed in films grown at 500$\sp\circ$C without ion doping and suggested an inherent limitation of MBE-grown Si at this temperature and a rate of 2 m h$\sp{-1}$. DLTS majority carrier trap concentrations in films grown at 500$\sp\circ$C varied between 2 $\times$ 10$\sp{14}$ cm$\sp{-3}$ and 5 $\times$ 10$\sp{17}$ cm$\sp{-3}$ for 200 and 1000 eV As$\sp+$ ion doping, respectively.
Issue Date:1990
Type:Text
Language:English
URI:http://hdl.handle.net/2142/19075
Rights Information:Copyright 1990 Noel, Jean-Paul Francis
Date Available in IDEALS:2011-05-07
Identifier in Online Catalog:AAI9021735
OCLC Identifier:(UMI)AAI9021735


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