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Title:Single frequency semiconductor lasers
Author(s):Smith, Gary Michael
Doctoral Committee Chair(s):Coleman, James J.
Department / Program:Electrical and Computer Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Physics, Optics
Engineering, Materials Science
Abstract:Single frequency semiconductor lasers are of interest for communication systems and spectroscopy. In communications, narrow linewidth is desirable to minimize dispersion effects and low cross-talk multiple wavelength channels on a single fiber. For GaAs-based lasers, the interest in narrow linewidth sources comes from the spectroscopy community that desires a light source that can be tuned to very narrow absorption spectra of various materials. For both of these applications, narrow linewidth, wavelength tunable semiconductor lasers are well-suited.
This thesis describes the development of a single epitaxial growth ridge waveguide distributed Bragg reflector (RW-DBR) laser. These lasers exhibit low thresholds, fairly high slope efficiencies, and single frequency operation with very narrow linewidth. The fabrication requires only a single epitaxial growth of a standard laser structure and then an anisotropic etch to transfer a grating pattern from the top surface of the laser into the epitaxial layers. The initial RW-DBR lasers fabricated by this method had symmetric cladding layers with a thickness of 1.2 $\mu$m, which required etch depths of over 1 $\mu$m in order to couple adequately to the optical mode. This required a highly anisotropic etch and limited the device design to third-order gratings. However, fairly good device performance was demonstrated with these symmetric cladding RW-DBR lasers.
To relax the constraints on the grating etch, an asymmetric cladding separate confinement heterostructure (AC-SCH) laser was developed. The AC-SCH design reduces the thickness of the top cladding layer, which results in shallower depths for the grating etch and allows the fabrication of more efficient second-order DBR gratings. The incorporation of the AC-SCH into the RW-DBR laser reduces the threshold current, increases the efficiency, and decreases the spectral linewidth.
Issue Date:1996
Rights Information:Copyright 1996 Smith, Gary Michael
Date Available in IDEALS:2011-05-07
Identifier in Online Catalog:AAI9625195
OCLC Identifier:(UMI)AAI9625195

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