Files in this item
Files | Description | Format |
---|---|---|
application/pdf ![]() ![]() | (no description provided) |
Description
Title: | Stress and structure of silicon surfaces |
Author(s): | Twesten, Ray Dudley |
Doctoral Committee Chair(s): | Gibson, J. Murray |
Department / Program: | Physics |
Discipline: | Physics |
Degree Granting Institution: | University of Illinois at Urbana-Champaign |
Degree: | Ph.D. |
Genre: | Dissertation |
Subject(s): | Engineering, Electronics and Electrical
Physics, Condensed Matter |
Abstract: | It is well-known that a surface's structure affects its properties; the effect of a surface's intrinsic stress, however, is less widely known but just as important. Using the novel technique of ultra-high vacuum transmission electron microscopy, I have investigated both the structure and the stress of the Silicon (111) surface. The kinematic analysis of electron diffraction data was used to determine the positions of the surface atoms of the Si(111)-7x7 reconstruction. Even under the seemingly drastic kinematic approximation, the atomic positions determined were in excellent agreement with those determined by x-ray diffraction. The relation of stress to structure is revealed in the 7x7 to "1x1" phase transition on the Si(111) surface. While only a small amount of stress is relieved in the transition, it is clearly measurable, with a value of 30meV/A$\sp2$. This value is consistent with the disordered adatom model for "1x1" surface. |
Issue Date: | 1995 |
Type: | Text |
Language: | English |
URI: | http://hdl.handle.net/2142/19392 |
Rights Information: | Copyright 1995 Twesten, Ray Dudley |
Date Available in IDEALS: | 2011-05-07 |
Identifier in Online Catalog: | AAI9624523 |
OCLC Identifier: | (UMI)AAI9624523 |
This item appears in the following Collection(s)
-
Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois -
Dissertations and Theses - Physics
Dissertations in Physics