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Title:Stress and structure of silicon surfaces
Author(s):Twesten, Ray Dudley
Doctoral Committee Chair(s):Gibson, J. Murray
Department / Program:Physics
Discipline:Physics
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Physics, Condensed Matter
Abstract:It is well-known that a surface's structure affects its properties; the effect of a surface's intrinsic stress, however, is less widely known but just as important. Using the novel technique of ultra-high vacuum transmission electron microscopy, I have investigated both the structure and the stress of the Silicon (111) surface. The kinematic analysis of electron diffraction data was used to determine the positions of the surface atoms of the Si(111)-7x7 reconstruction. Even under the seemingly drastic kinematic approximation, the atomic positions determined were in excellent agreement with those determined by x-ray diffraction. The relation of stress to structure is revealed in the 7x7 to "1x1" phase transition on the Si(111) surface. While only a small amount of stress is relieved in the transition, it is clearly measurable, with a value of 30meV/A$\sp2$. This value is consistent with the disordered adatom model for "1x1" surface.
Issue Date:1995
Type:Text
Language:English
URI:http://hdl.handle.net/2142/19392
Rights Information:Copyright 1995 Twesten, Ray Dudley
Date Available in IDEALS:2011-05-07
Identifier in Online Catalog:AAI9624523
OCLC Identifier:(UMI)AAI9624523


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