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Studies of trap generation in silicon-dioxide and electromigration in aluminum thin films

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Title: Studies of trap generation in silicon-dioxide and electromigration in aluminum thin films
Author(s): Chen, Ann J.
Doctoral Committee Chair(s): Sah, C.T.
Department / Program: Electrical and Computer Engineering
Discipline: Electrical Engineering
Degree Granting Institution: University of Illinois at Urbana-Champaign
Degree: Ph.D.
Genre: Dissertation
Subject(s): Engineering, Electronics and Electrical
Abstract: The effects of HCl on trap generation in SiO$\sb2$ film and at Si/SiO$\sb2$ interface at high electric fields are studied by avalanche electron injection. A comparison between a 9%-HCl-oxide MOS capacitor and a dry-oxide MOS capacitor shows that HCl decreases the hydrogenation rate of the boron acceptor in the silicon surface layer and increases the density of the peaked interface trap at 0.3 eV above the silicon midgap. A new chlorine-related, positively-charged electron trap in the oxide is observed and isolated from the chlorine-independent, negatively-charged oxide hole trap. Chlorine also reduces the density of the smaller cross-section oxide electron trap, which gives the turn-around phenomenon.Electromigration in pure aluminum thin film is studied at high-current density and low-test temperature. The resistance of the aluminum line is measured during current stress. The following points are concluded from this study: (1) Due to the thermal resistances of the substrate and the package, the temperature at the thin film surface is higher than that at the ambient. This additional temperature rise has to be corrected in order to compare the data. (2) A damage relaxation is observed when the current is turned off; therefore, the lifetime of pulse operation cannot be obtained by dividing a duty factor from the lifetime of direct current operation. (3) The anode is damaged more seriously than the cathode in our samples.
Issue Date: 1989
Type: Text
Language: English
URI: http://hdl.handle.net/2142/19715
Rights Information: Copyright 1989 Chen, Ann J.
Date Available in IDEALS: 2011-05-07
Identifier in Online Catalog: AAI8916225
OCLC Identifier: (UMI)AAI8916225
 

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