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Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures

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Title: Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures
Author(s): Deppe, Dennis Glenn
Doctoral Committee Chair(s): Holonyak, Nick, Jr
Department / Program: Electrical and Computer Engineering
Discipline: Electrical Engineering
Degree Granting Institution: University of Illinois at Urbana-Champaign
Degree: Ph.D.
Genre: Dissertation
Subject(s): Engineering, Electronics and Electrical
Abstract: The process of impurity-induced layer disordering (IILD), or layer intermixing, in Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As-GaAs quantum-well heterostructures (QWHs) and superlattices (SLs), and in related III-V quantum well heterostructures, has developed extensively. A large variety of experimental data on IILD are discussed and provide newer information and further perspective on crystal self-diffusion, impurity diffusion, and also the important defect mechanisms that control diffusion in Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As-GaAs, and in related III-V semiconductors. Based on the behavior of Column III vacancies and Column III interstitials, models for the crystal self-diffusion and impurity diffusion that describe IILD are presented and shown to be consistent with available experimental data. We mention that it may be possible to realize even more advanced device structures using IILD, for example, quantum well wires or quantum well boxes. These will require an even greater understanding of the mechanisms (crystal processes) that control IILD, as well as require more refined methods of pattern definition, masking procedures, and crystal processing.
Issue Date: 1989
Type: Text
Language: English
URI: http://hdl.handle.net/2142/19738
Rights Information: Copyright 1989 Deppe, Dennis Glenn
Date Available in IDEALS: 2011-05-07
Identifier in Online Catalog: AAI8916238
OCLC Identifier: (UMI)AAI8916238
 

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