Files in this item



application/pdf9011044.pdf (3MB)Restricted to U of Illinois
(no description provided)PDF


Title:Characteristics of semiconductor optical waveguides fabricated by impurity-induced layer disordering
Author(s):Swanson, Paul David
Doctoral Committee Chair(s):DeTemple, Thomas A.
Department / Program:Electrical and Computer Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Physics, Optics
Abstract:Impurity induced layer disorder-delineated buried channel optical waveguide non-rectilinear routing structures are found to have loss properties equal to or better than other planar optical waveguides. With 3 dB loss angles of 3$\sp\circ$, for simple abrupt bends, and 7$\sp\circ$, for modified abrupt bends, and 3 dB transition lengths of $\sim$300 $\mu$m for S bends with a 100 $\mu$m offset, these waveguides are capable of handling the routing requirements for many opto-electronic integrated circuit applications. A previously uncharacterized electro-absorption effect in a single quantum well graded barrier laser heterostructure was investigated as a means of providing electro-optic modulation and detection. This electroabsorption effect produced a change of over 100 cm$\sp{-1}$ in the modal absorption coefficient with less than a volt change in bias. Based on these findings, the feasibility of using a single heterostructure for the integration of multiple optical devices is addressed.
Issue Date:1989
Rights Information:Copyright 1989 Swanson, Paul David
Date Available in IDEALS:2011-05-07
Identifier in Online Catalog:AAI9011044
OCLC Identifier:(UMI)AAI9011044

This item appears in the following Collection(s)

Item Statistics