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Characteristics of semiconductor optical waveguides fabricated by impurity-induced layer disordering

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Title: Characteristics of semiconductor optical waveguides fabricated by impurity-induced layer disordering
Author(s): Swanson, Paul David
Doctoral Committee Chair(s): DeTemple, Thomas A.
Department / Program: Electrical and Computer Engineering
Discipline: Electrical Engineering
Degree Granting Institution: University of Illinois at Urbana-Champaign
Degree: Ph.D.
Genre: Dissertation
Subject(s): Engineering, Electronics and Electrical Physics, Optics
Abstract: Impurity induced layer disorder-delineated buried channel optical waveguide non-rectilinear routing structures are found to have loss properties equal to or better than other planar optical waveguides. With 3 dB loss angles of 3$\sp\circ$, for simple abrupt bends, and 7$\sp\circ$, for modified abrupt bends, and 3 dB transition lengths of $\sim$300 $\mu$m for S bends with a 100 $\mu$m offset, these waveguides are capable of handling the routing requirements for many opto-electronic integrated circuit applications. A previously uncharacterized electro-absorption effect in a single quantum well graded barrier laser heterostructure was investigated as a means of providing electro-optic modulation and detection. This electroabsorption effect produced a change of over 100 cm$\sp{-1}$ in the modal absorption coefficient with less than a volt change in bias. Based on these findings, the feasibility of using a single heterostructure for the integration of multiple optical devices is addressed.
Issue Date: 1989
Type: Text
Language: English
URI: http://hdl.handle.net/2142/19757
Rights Information: Copyright 1989 Swanson, Paul David
Date Available in IDEALS: 2011-05-07
Identifier in Online Catalog: AAI9011044
OCLC Identifier: (UMI)AAI9011044
 

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