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|Title:||The electronic, optical and excitonic effects of high hydrostatic pressure on semiconductors|
|Author(s):||Herrmannsfeldt, Glen Alan|
|Doctoral Committee Chair(s):||Drickamer, H.G.|
|Department / Program:||Physics|
|Degree Granting Institution:||University of Illinois at Urbana-Champaign|
|Subject(s):||Physics, Condensed Matter
|Abstract:||This thesis describes the results from high pressure experiments on semiconductors, and some theoretical background for those experiments. The primary goal is to better understand the properties of these useful materials through studies of the effect of hydrostatic pressure.
The experimental data includes studies of the electroluminescent emission spectra of gallium aluminum arsenide laser diodes and heterostructure LEDs, and also bound exciton recombination in nitrogen doped gallium phosphide.
The theoretical sections relate to understanding the properties of the bound exciton and how to calculate the pressure effect on the wave function.
The gallium aluminum arsenide studies were motivated by the current technological applications of this material. The gallium phosphide studies allowed a better understanding of a system that has been in commercial use for many years.
The theoretical sections resulted from a desire to better understand the experimental results, and to better understand the methods of computational semiconductor physics.
|Rights Information:||Copyright 1989 Herrmannsfeldt, Glen Alan|
|Date Available in IDEALS:||2011-05-07|
|Identifier in Online Catalog:||AAI9010882|