Files in this item



application/pdf9210918.pdf (3MB)Restricted to U of Illinois
(no description provided)PDF


Title:Surface-interface states and the Hall effect measurement of epitaxial and semi-insulating liquid-encapsulated Czochralski gallium arsenide
Author(s):Miller, William Raymond
Doctoral Committee Chair(s):Stillman, Gregory E.
Department / Program:Electrical and Computer Engineering
Discipline:Electrical and Computer Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Physics, Condensed Matter
Abstract:The effect of surface-potential changes on the Hall-effect measurement of n-type and p-type epitaxial GaAs and undoped and Cr-doped semi-insulating (SI) LEC GaAs has been studied. The surface-potential changes were induced by wet chemical treatments in ammonium hydroxide and hydrogen peroxide to modify the surface-interface state distribution. The experimental results for epitaxial GaAs are shown to be well-explained by a mathematical model based on the advanced unified defect (AUD) model of the surface-interface states. The same surface-interface state model has been used in a detailed theoretical model for surface effects, of a magnitude not previously reported in the literature, seen in SI LEC GaAs. The agreement between the theoretical results and experimental data provides strong support for the surface-interface state model used here, relative to a variety of other models proposed in the literature, and demonstrates its practicality as the first "working" mathematical model of surface-interface states in GaAs.
Issue Date:1991
Rights Information:Copyright 1991 Miller, William Raymond
Date Available in IDEALS:2011-05-07
Identifier in Online Catalog:AAI9210918
OCLC Identifier:(UMI)AAI9210918

This item appears in the following Collection(s)

Item Statistics