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Description
Title: | Chemical beam, gas-source molecular beam, and molecular beam epitaxial growth of III/V compound semiconductor materials |
Author(s): | McCollum, Mark John |
Doctoral Committee Chair(s): | Stillman, Gregory E. |
Department / Program: | Electrical and Computer Engineering |
Discipline: | Electrical and Computer Engineering |
Degree Granting Institution: | University of Illinois at Urbana-Champaign |
Degree: | Ph.D. |
Genre: | Dissertation |
Subject(s): | Engineering, Electronics and Electrical
Physics, Condensed Matter Engineering, Materials Science |
Abstract: | A new and unique high vacuum crystal growth system has been developed. The gas source molecular beam/chemical beam epitaxial growth system features a 7000 l/s diffusion pumping system mounted directly beneath a molecular beam epitaxial growth chamber. After careful thermal cleaning of the new growth chamber, p-type GaAs of higher purity than previously reported has been grown by diffusion pumped molecular beam epitaxy. The purity of GaAs grown by this method increases directly from increased pumping. The system has also been used for growth of GaAs by gas-source molecular beam epitaxy and chemical beam epitaxy and the effects of a number of growth parameters on background carrier concentration are reported. High quality InGaP has been grown by gas-source molecular beam epitaxy. The differential thermal expansion coefficient of InGaP on GaAs has been determined directly from variable temperature x-ray measurements. InGaP has also been grown by chemical beam epitaxy. Although the quality of the layers is inferior to those grown by gas-source molecular beam epitaxy, the work presented here is one of the first reports of InGaP grown by chemical beam epitaxy. The results of these investigations are presented and the problems and advantages of the system are discussed. |
Issue Date: | 1990 |
Type: | Text |
Language: | English |
URI: | http://hdl.handle.net/2142/20075 |
Rights Information: | Copyright 1990 McCollum, Mark John |
Date Available in IDEALS: | 2011-05-07 |
Identifier in Online Catalog: | AAI9026265 |
OCLC Identifier: | (UMI)AAI9026265 |
This item appears in the following Collection(s)
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Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois -
Dissertations and Theses - Electrical and Computer Engineering
Dissertations and Theses in Electrical and Computer Engineering