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Description
Title: | Molecular beam epitaxial growth and characterization of indium antimonide on gallium arsenide |
Author(s): | Chyi, Jen-Inn |
Department / Program: | Electrical and Computer Engineering |
Discipline: | Electrical and Computer Engineering |
Degree Granting Institution: | University of Illinois at Urbana-Champaign |
Degree: | Ph.D. |
Genre: | Dissertation |
Subject(s): | Engineering, Electronics and Electrical
Engineering, Materials Science |
Abstract: | Described in this thesis are the molecular beam epitaxial growth and characterization of InSb on GaAs substrates. The growth conditions and mechanisms of this highly lattice-mismatched system are detailed. Structural, electrical, and optical properties of the InSb epilayers are characterized by transmission electron microscopy (TEM), X-ray rocking curves, Hall measurements, photoluminescence (PL), and transmission measurements. The TEM study reveals pure edge-type, instead of the common 60$\sp\circ$-type, misfit dislocations at the InSb/GaAs interfaces. The reason for the formation of these misfit dislocations are given. Electrical measurements show that dislocation scattering is an important scattering mechanism in the epilayers. A charged dislocation scattering is proposed to explain the temperature and carrier concentration dependence of electron mobility. Low temperature PL shows a single band-edge transition similar to that of bulk InSb, indicating very little or no residual strain in the epilayers. Indium antimonide p$\sp{+}$-n diodes have been successfully fabricated on as-grown and ion-implanted wafers. The electrical characteristics of these diodes compare favorably to those reported on similar devices. Further improvement can be achieved by proper surface passivation. Indium antimonide-Gallium arsenide p-n, p-p, and n-n heterojunctions have also been prepared for this study with all of the junctions exhibiting excellent rectifying characteristics. From capacitance-voltage measurements, the band offsets of InSb/GaAs junctions have been, for the first time, determined experimentally. |
Issue Date: | 1990 |
Type: | Text |
Language: | English |
URI: | http://hdl.handle.net/2142/20086 |
Rights Information: | Copyright 1990 Chyi, Jen-Inn |
Date Available in IDEALS: | 2011-05-07 |
Identifier in Online Catalog: | AAI9114207 |
OCLC Identifier: | (UMI)AAI9114207 |
This item appears in the following Collection(s)
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Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois