Files in this item

FilesDescriptionFormat

application/pdf

application/pdf9712267.pdf (5MB)Restricted to U of Illinois
(no description provided)PDF

Description

Title:A high-speed monolithically-integrated photoreceiver for long-wavelength communication systems
Author(s):Fay, Patrick John
Doctoral Committee Chair(s):Adesida, Ilesanmi
Department / Program:Electrical and Computer Engineering
Discipline:Electrical and Computer Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:For future long-haul optical fiber telecommunication systems, the development of monolithically integrated, high-speed $(>10$Gb/s) long wavelength photoreceivers is of considerable interest due to the potential advantages in size, reliability, and performance in comparison to those for hybrid receivers, especially at very high bit rates. This thesis details the design, fabrication, and characterization of monolithically integrated photoreceivers suitable for high bit rate, long wavelength optical fiber telecommunication systems based on lattice matched InAlAs/InGaAs/InP high electron mobility transistors (HEMTs) and InAlAs/InGaAlAs/InP metal-semiconductor-metal photodetectors (MSM-PDs). Extensive electronic and optoelectronic measurements of discrete devices are presented, and details of the fabrication processes developed are discussed. The device models used in the circuit design of the photoreceiver are discussed in detail. The performance of the fabricated photoreceiver circuits is reported and compared to the results of circuit simulations.
The photoreceiver circuit designed and fabricated is based on a transimpedance amplifier topology with an active feedback resistor implemented using a common-gate HEMT. The HEMTs used in the photoreceiver are 0.2 $\mu$m gate length devices with transit frequency $\rm (f\sb{t})$ of 115 GHz and maximum frequency of oscillation $\rm (f\sb{\max})$ in excess of 150 GHz. The photoreceivers exhibited a 3 dB optoelectronic bandwidth of up to 18.5 GHz. From noise power spectral density measurements, sensitivities for a bit error rate of $1 \times 10\sp{-9}$ of $-18.2$ dBm and $-12.3$ dBm are projected for 10 Gb/s and 20 Gb/s digital data streams, respectively.
Issue Date:1996
Type:Text
Language:English
URI:http://hdl.handle.net/2142/20214
ISBN:9780591198072
Rights Information:Copyright 1996 Fay, Patrick John
Date Available in IDEALS:2011-05-07
Identifier in Online Catalog:AAI9712267
OCLC Identifier:(UMI)AAI9712267


This item appears in the following Collection(s)

Item Statistics