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Title:An investigation of heterojunction bipolar transistors by molecular beam epitaxy
Author(s):Won, Taeyoung
Doctoral Committee Chair(s):Morkoc, Hadis
Department / Program:Electrical and Computer Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Physics, Condensed Matter
Engineering, Materials Science
Abstract:Described in this thesis are the growth, characterization, and modeling of heterojunction bipolar transistors (HBTs). The superior high current handling capacity and high operation frequency of heterojunction bipolar transistors have attracted a great deal of interest in millimeter-wave and high-speed digital applications. This thesis details the performance of InAlAs/InGaAs and AlGaAs/GaAs-on-Si HBTs investigated with state-of-the-art results. Carrier transport across the heterointerface, the current conduction mechanism in the base, and related device parameters of the experimental results are emphasized.
A theoretical model that relates output characteristics of heterojunction bipolar transistors to the device structure and material properties is developed and presented with an introduction of the junction velocity concept across the heterointerface. A fairly close agreement between experimental results and theoretical calculation of output characteristics is demonstrated. The InAlAs/InGaAs and AlGaAs/GaAs-on-Si heterojunction bipolar transistors exhibited excellent device performance with the best dc current gains, in MBE grown devices, for both n-p-n and p-n-p structures to date. These results indicate the potential of heterojunction bipolar transistors in realizing high-speed, high-power microwave and millimeter-wave integrated circuits and fast digital switching circuits.
Issue Date:1989
Rights Information:Copyright 1989 Won, Taeyoung
Date Available in IDEALS:2011-05-07
Identifier in Online Catalog:AAI9011078
OCLC Identifier:(UMI)AAI9011078

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