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Title:Native oxides on aluminum-bearing III-V semiconductors with applications to single-mode behavior, bistability and switching
Author(s):El-Zein, Nada Abdullatif
Doctoral Committee Chair(s):Holonyak, Nick, Jr.
Department / Program:Electrical and Computer Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:In this work, water vapor oxidation of Al-bearing III--V semiconductors is employed to form high quality native oxides. The native oxides described are formed at temperatures in the range of 400$\sp\circ$C to 450$\sp\circ$C. Some of the basic properties of the oxide are first described. The properties include the insulating and diffusion masking nature of the oxide as well as its low index of refraction.
Device-quality insulating oxides are demonstrated in the $\rm Al\sb{x}Ga\sb{1-x}$As-GaAs and $\rm Al\sb{y}Ga\sb{1-y}$As-GaAs-$\rm In\sb{x}Ga\sb{1-x}As$ systems and are employed for current confinement in stripe-geometry gain guided laser diodes. The insulating properties and low refractive index (n $\sim$ 1.6) of AlGaAs native oxide are employed to fabricate single-longitudinal-mode planar native-oxide AlGaAs-GaAs quantum well heterostructure (QWH) laser diodes. This is done by patterning the stripes into a linear array. Data are also presented on the use of the native oxide to obtain switching and bistability with large hysteresis when fabricating laser diodes. Three-terminal bistable devices are examined. Finally, data are presented on the wavelength selectivity of the native oxide bistable devices.
Issue Date:1995
Rights Information:Copyright 1995 El-Zein, Nada Abdullatif
Date Available in IDEALS:2011-05-07
Identifier in Online Catalog:AAI9543579
OCLC Identifier:(UMI)AAI9543579

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