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Title:Full band ensemble Monte Carlo simulation of silicon devices
Author(s):Lee, Christopher HeeChang
Doctoral Committee Chair(s):Ravaioli, Umberto
Department / Program:Electrical and Computer Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:A Monte Carlo simulator for silicon devices has been developed. The band structure data for this self-consistent device simulator were computed using the empirical pseudopotential method. The ensemble Monte Carlo technique used in the simulations is described in detail. A homogeneous simulator, based on the same transport physics, is used to calibrate the device simulator as well as to indicate the shortcomings of more traditional simulators such as drift-diffusion based models, hydrodynamic and energy balance based models, and nonparabolic band approximation Monte Carlo models. A conventional metal-oxide-semiconductor field effect transistor (MOSFET) is simulated as a test case to validate the simulator. Finally, a floating gate memory element (non-volatile memory) is also examined. In this simulation, the Monte Carlo simulator is used as a post-processor to PISCES IIB in the interest of execution time. Despite the lack of self-consistency and rigor, the simulator is able to produce results which are in good agreement with experimental data.
Issue Date:1994
Type:Text
Language:English
URI:http://hdl.handle.net/2142/20595
Rights Information:Copyright 1994 Lee, Christopher HeeChang
Date Available in IDEALS:2011-05-07
Identifier in Online Catalog:AAI9416391
OCLC Identifier:(UMI)AAI9416391


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