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Description
Title: | Metal-semiconductor-metal photodetectors for optoelectric receiver applications |
Author(s): | Seo, Jong-Wook |
Doctoral Committee Chair(s): | Adesida, Ilesanmi |
Department / Program: | Electrical and Computer Engineering |
Discipline: | Electrical Engineering |
Degree Granting Institution: | University of Illinois at Urbana-Champaign |
Degree: | Ph.D. |
Genre: | Dissertation |
Subject(s): | Engineering, Electronics and Electrical
Physics, Condensed Matter |
Abstract: | It has been found that the barrier height lowering observed in reverse-biased Schottky junction is due mainly to the change in electrical potential across the interfacial layer at the metal-semiconductor contact. The voltage dependence of barrier height is described, and excellent agreement with experimental data is shown. The surface state density and interfacial layer thickness of a (Ti/Au) /n-InAlAs Schottky junction are estimated from its I-V characteristics. The expressions of the barrier heights of junctions in a metal-semiconductor-metal photodiode (MSMPD) are derived, and excellent agreement with experiment is shown. The adjustment of barrier height and dark current by annealing is investigated based on the theory. The merit of transparent electrodes for MSMPD in an optoelectronic-integrated-circuit (OEIC) is described, and it is shown that the signal-to-noise-ratio (SNR) of a receiver can be improved by the employment of transparent electrodes. The design, fabrication, and characterization of MSMPDs for long- $(\lambda = 1.3\ \mu$m) and short-wavelength $(\lambda = 0.85\ \mu$m) applications are presented in detail. The deposition by RF magnetron sputtering and etching by reactive-ion-etching (RIE) of ITO film are described. It has been found that H$\sb2$ incorporation in an Ar plasma during ITO deposition improves the optical transmittance of the film at $\lambda = 1.3\ \mu$m. Responsivity was doubled by ITO electrodes and an anti-reflection (AR) coating. Bandwidths (3-dB) of 22 GHz and 16.6 GHz were obtained for long- and short-wavelength MSMPD, respectively. A 3-dB bandwidth of 6 GHz was obtained for both long-and short-wavelength ITO-MSMPDs. It is shown that the wide band-gap barrier enhancement layer reduces optical responsivity by capturing carriers at the heterointerface. The effects of surface and surface passivation on MSMPD performance are studied. The characterization of OEIC receiver with a transimpedance amplifier is described. |
Issue Date: | 1993 |
Type: | Text |
Language: | English |
URI: | http://hdl.handle.net/2142/20741 |
Rights Information: | Copyright 1993 Seo, Jong-Wook |
Date Available in IDEALS: | 2011-05-07 |
Identifier in Online Catalog: | AAI9411779 |
OCLC Identifier: | (UMI)AAI9411779 |
This item appears in the following Collection(s)
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Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois -
Dissertations and Theses - Electrical and Computer Engineering
Dissertations and Theses in Electrical and Computer Engineering