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Title:Full-band Monte Carlo simulation of hot electrons in scaled silicon devices
Author(s):Duncan, Amanda Watson
Doctoral Committee Chair(s):Ravaioli, Umberto
Department / Program:Electrical and Computer Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Physics, Condensed Matter
Abstract:A full-band Monte Carlo device simulator has been used to study the effects of device scaling on hot electrons in different types of n-channel MOSFETs and flash memory structures. A MOSFET with a single source/drain implant, an LDD MOSFET, an SOI MOSFET, and a MOSFET built on top of a heavily doped "ground plane" have been simulated. Different scaling techniques have been applied to the devices to see the effects on the electric field, the energy distributions of the electrons, and the drain, substrate, and gate currents. The locations of impact ionization events and injection into the gate oxide are examined. It is shown that simpler models cannot adequately predict hot carrier behavior at the channel lengths studied (below 0.3 $\mu$m) and that several strategies that are successful at suppressing the hot carrier population for longer channel lengths are not as useful when 0.1 $\mu$m channel lengths are approached. The effect of scaling on the programming of stacked-gate and split-gate flash memory devices was also studied. Predictions of hot carrier behavior in small MOSFETs and flash memory devices are made, and suggestions for device design are given.
Issue Date:1996
Rights Information:Copyright 1996 Duncan, Amanda Watson
Date Available in IDEALS:2011-05-07
Identifier in Online Catalog:AAI9712263
OCLC Identifier:(UMI)AAI9712263

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