Files in this item



application/pdf9010855.pdf (3MB)Restricted to U of Illinois
(no description provided)PDF


Title:Growth and characterization of gallium arsenide on silicon-on-sapphire and silicon
Author(s):Feng, Ming-Shiann
Doctoral Committee Chair(s):Wert, C.A.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Metallurgy
Abstract:A study has been conducted to investigate and compare the growth, strain, defects, electrical and optical properties of GaAs layers grown simultaneously on silicon-on-sapphire (SOS) and Si substrates using a two-step metalorganic chemical vapor deposition (MOCVD) growth procedure. A variety of techniques have been used to characterize and investigate the different properties of these two layers. Among them, x-ray diffraction was used to determine the lattice dimensions and thereby the sign of residual strain, x-ray rocking procedures to measure the strain and crystallinity, and variable temperature x-ray diffraction to investigate the temperature dependence of residual strain. Scanning electron microscopy (SEM) was used to examine the surface morphology. Transmission electron microscopy (TEM) was used to observe the microstructure and defect distribution as well as defect density. Also secondary ion mass spectroscopy (SIMS) was used to study the cross-diffusion from substrates. In addition, capacitance-voltage (C-V) measurements and Hall-effect measurements were used to determine the carrier concentration and mobility. Finally, photoluminescence (PL) was used to observe the low-temperature optical response of GaAs layers. The results of these investigations of GaAs on SOS and Si substrates are compared as a function of the thickness of GaAs layers. Finally, the effects of residual strain, presence of defects and cross-diffusion of Si on electrical and optical properties of GaAs layers are discussed.
Issue Date:1989
Rights Information:Copyright 1989 Feng, Ming-Shiann
Date Available in IDEALS:2011-05-07
Identifier in Online Catalog:AAI9010855
OCLC Identifier:(UMI)AAI9010855

This item appears in the following Collection(s)

Item Statistics