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 Title: Preparation and characterization of metal/sapphire and metal/polyimide thin film laminates Author(s): Peddada, Satyanarayana Rao Doctoral Committee Chair(s): Birnbaum, Howard K. Department / Program: Materials Science and Engineering Discipline: Materials Engineering Degree Granting Institution: University of Illinois at Urbana-Champaign Degree: Ph.D. Genre: Dissertation Subject(s): Engineering, Metallurgy Engineering, Materials Science Abstract: The aim of this research program was to understand the effect of thermal cycling on metal/insulator (sapphire and polyimide, PI) thin film laminates through studies of microstructure and microchemistry. Systems studied were: Ti/sapphire, Au/Cu/Ti/PI/Si and Cr/Cu/Cr/PI/Si. In the Ti/sapphire system, there was an additional interest to understand the effect of growth temperature on growth orientation and crystal quality of the films. The three material systems were characterized by a number of analytical techniques such as cross-section TEM (XTEM), plan-view TEM, SEM, Auger Electron Spectroscopy and X-ray diffraction. Of these, XTEM was the most extensively used.In the Ti/sapphire system, single crystals formed in the temperature range 245-750$\sp\circ$C with the respective close packed planes and directions parallel. The crystal quality improved with an increase in the growth temperature up to 750$\sp\circ$C. The interface was observed to be sharp with no reaction layer formation even at a growth temperature of 950$\sp\circ$C. On annealing in D$\sb2$ gas at 325$\sp\circ$C for 48 hours, the Ti film transformed to TiD$\sb2,$ but no mechanical failures were observed.In the Ti/PI system, on annealing in D$\sb2$ gas at 325$\sp\circ$C for 48 hours, the interface remained sharp to a large extent, but a discontinuous reaction zone consisting of an oxide, $\rm Ti\sb5O\sb9,$ formed at the interface due to a reaction between Ti and moisture in the PI. On annealing in D$\sb2$ gas, spontaneous edge delamination was observed at the Ti/PI interface. There was no extensive diffusion of Ti or Cu into PI even in samples annealed at 400$\sp\circ$C for 48 hours.In the Cr/PI system, the interface remained sharp after annealing at 325$\sp\circ$C irrespective of the ambient atmosphere. Tensile cracks formed due to residual thermal stresses. There was no significant diffusion of Cr or Cu into PI on annealing at 325$\sp\circ$C for 48 hours. Issue Date: 1991 Type: Text Language: English URI: http://hdl.handle.net/2142/21833 Rights Information: Copyright 1991 Peddada, Satyanarayana Rao Date Available in IDEALS: 2011-05-07 Identifier in Online Catalog: AAI9210950 OCLC Identifier: (UMI)AAI9210950
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