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 Title: Monte Carlo simulation of quasi-one-dimensional semiconductors Author(s): Briggs, Stephen Jeffrey Doctoral Committee Chair(s): Leburton, Jean-Pierre Department / Program: Electrical and Computer Engineering Discipline: Electrical and Computer Engineering Degree Granting Institution: University of Illinois at Urbana-Champaign Degree: Ph.D. Genre: Dissertation Subject(s): Physics, Electricity and Magnetism Physics, Condensed Matter Abstract: Because of the particular confinement configuration of one-dimensional systems, the absence of angular randomization during scattering makes the carrier distribution sensitive to external perturbations and causes appreciable deviations from the equilibrium relatively rapidly. A Monte Carlo simulation is presented of a multisubband quasi-one-dimensional gallium arsenide-aluminum gallium arsenide structure. The model includes multiple subbands, polar optic and acoustic phonons, intervalley scattering, and band structure non-parabolicity.The linear approximation to the Boltzmann Transport Equation is found to be inconsistent for fields as low as 50 V/cm. A situation occurs under longitudinal field conditions where an upper subband population is enhanced with respect to the bottom subband. Intersubband optical transitions with the possibility of far-infrared stimulated emission seem to be significant.Differential mobility in excess of twice the bulk value at 300 K is obtained. The simulation estimates the time required for electrons to undergo intervalley scattering to three-dimensional states to be in the range of 4 nsec down to 1 psec for fields in the range of 100 V/cm to 8 kV/cm. The corresponding distances in the wire vary from 130 $\mu$m down to the submicron range. Issue Date: 1990 Type: Text Language: English URI: http://hdl.handle.net/2142/22368 Rights Information: Copyright 1990 Briggs, Stephen Jeffrey Date Available in IDEALS: 2011-05-07 Identifier in Online Catalog: AAI9114182 OCLC Identifier: (UMI)AAI9114182
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