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Title:Experimental investigation of hot electron and related effects in gallium(aluminum)arsenide devices
Author(s):Higman, Ted King
Doctoral Committee Chair(s):Coleman, James J.
Department / Program:Electrical and Computer Engineering
Discipline:Electrical and Computer Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:The advance of crystal growth technology, specifically metalorganic chemical vapor deposition (MOCVD) as it relates to this work, has made it practical to manufacture an entirely new class of heterojunction devices. Physical properties of semiconductor heterojunction devices such as resonant tunneling and ballistic transport and various hot electron effects discussed within, have been moved from the status of academic curiosity to physically realizable, useful effects.
The theoretical and experimental results from the heterostructure hot electron diode (HHED), a two-terminal device which exhibits S-shaped negative differential resistance, are presented, which shed new light on the transport processes involved in the tunneling, resonant tunneling and thermionic emission processes in semiconductor heterostructures. In support of some of the conclusions about the heterostructure hot electron diode, experiments involving transport of two-dimensional electrons in the negative resistance field effect transistor (NERFET) in high crossed electric and magnetic fields are also presented. In addition, pertinent facts relating to the fabrication and test of these devices are presented in order to obtain a clear picture of the simple techniques used to obtain the data contained herein.
Issue Date:1989
Type:Text
Language:English
URI:http://hdl.handle.net/2142/22480
Rights Information:Copyright 1989 Higman, Ted King
Date Available in IDEALS:2011-05-07
Identifier in Online Catalog:AAI8924837
OCLC Identifier:(UMI)AAI8924837


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