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Title:Characterization of S-bend optical waveguides fabricated by impurity- and vacancy-induced layer disordering
Author(s):Tang, Tony Kai Tung
Doctoral Committee Chair(s):DeTemple, Thomas A.
Department / Program:Electrical and Computer Engineering
Discipline:Electrical and Computer Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Physics, Electricity and Magnetism
Physics, Condensed Matter
Abstract:The routing capabilities of waveguides defined by Zn, SiO$\sb2$, and In/SiO$\sb2$ Impurity-Induced Layer Disordering (IILD) of a single GaAs quantum-well graded barrier laser structure are investigated using raised-cosine S-bend geometries. The 3-dB transition length for a 100 $\mu$m offset S-bend waveguides fabricated using the Zn, SiO$\sb2$, or In/SiO$\sb2$ IILD process is less than 300 $\mu$m for near single-mode guides. In addition, vacancy-induced layer disordering (VILD) of the native quantum-well region is investigated and is shown to increase the band gap to a point at which the material is low-loss for radiation generated by a laser made from the native material. The 3-dB length for these blue-shifted waveguides decreases to about 230 $\mu$m due to reduced mode conversion. This VILD technique is also used to fabricate lasers with various blue-shifted emission wavelengths. Secondary Ion Mass Spectroscopy (SIMS) is used to study the separate and co-diffusions of silicon and indium from thin film sources. Indium is inferred to have a higher diffusion coefficient than silicon in GaAs and AlGaAs and to result in a similar degree of impurity-induced disordering of the single quantum-well laser structure.
Issue Date:1991
Rights Information:Copyright 1991 Tang, Tony Kai Tung
Date Available in IDEALS:2011-05-07
Identifier in Online Catalog:AAI9211008
OCLC Identifier:(UMI)AAI9211008

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