## Files in this item

FilesDescriptionFormat

application/pdf

9211008.pdf (3MB)
(no description provided)PDF

## Description

 Title: Characterization of S-bend optical waveguides fabricated by impurity- and vacancy-induced layer disordering Author(s): Tang, Tony Kai Tung Doctoral Committee Chair(s): DeTemple, Thomas A. Department / Program: Electrical and Computer Engineering Discipline: Electrical and Computer Engineering Degree Granting Institution: University of Illinois at Urbana-Champaign Degree: Ph.D. Genre: Dissertation Subject(s): Engineering, Electronics and Electrical Physics, Electricity and Magnetism Physics, Condensed Matter Abstract: The routing capabilities of waveguides defined by Zn, SiO$\sb2$, and In/SiO$\sb2$ Impurity-Induced Layer Disordering (IILD) of a single GaAs quantum-well graded barrier laser structure are investigated using raised-cosine S-bend geometries. The 3-dB transition length for a 100 $\mu$m offset S-bend waveguides fabricated using the Zn, SiO$\sb2$, or In/SiO$\sb2$ IILD process is less than 300 $\mu$m for near single-mode guides. In addition, vacancy-induced layer disordering (VILD) of the native quantum-well region is investigated and is shown to increase the band gap to a point at which the material is low-loss for radiation generated by a laser made from the native material. The 3-dB length for these blue-shifted waveguides decreases to about 230 $\mu$m due to reduced mode conversion. This VILD technique is also used to fabricate lasers with various blue-shifted emission wavelengths. Secondary Ion Mass Spectroscopy (SIMS) is used to study the separate and co-diffusions of silicon and indium from thin film sources. Indium is inferred to have a higher diffusion coefficient than silicon in GaAs and AlGaAs and to result in a similar degree of impurity-induced disordering of the single quantum-well laser structure. Issue Date: 1991 Type: Text Language: English URI: http://hdl.handle.net/2142/23284 Rights Information: Copyright 1991 Tang, Tony Kai Tung Date Available in IDEALS: 2011-05-07 Identifier in Online Catalog: AAI9211008 OCLC Identifier: (UMI)AAI9211008
﻿